Specifications

Document Number: 002-29354 Rev. ** Page 23 of 45
PRELIMINARY
CYBT-273063-02
CYBT-263064-02
CYBT-263065-02
Electrical Characteristics
The absolute maximum ratings in the following table indicate levels where permanent damage to the device can occur, even if these
limits are exceeded for only a brief duration. Functional operation is not guaranteed under these conditions. Operation at absolute
maximum conditions for extended periods can adversely affect long-term reliability of the device.
.
The CYBT-2X30XX-02 uses an onboard low voltage detector to shut down the device when supply voltage (VBAT) drops below the
operating range.
Table 11. Silicon Absolute Maximum Ratings
Requirement Parameter
Specification
Unit
Min. Nom. Max.
Maximum Junction Temperature – – TBD °C
VDDO1/VDDO2 –0.5 – 3.795 V
IFVDD/PLLVDD/VCOVDD/VDDC –0.5 – 1.38 V
PMUAVDD/SR_PVDD –0.5 – 3.795 V
DIGLDO_VDDIN –0.5 – 1.65 V
RFLDO_VDDIN –0.5 – 1.65 V
MIC_AVDD –0.5 – 3.795 V
Table 12. ESD/Latch-up
Requirement Parameter
Specification
Unit
Min. Nom. Max.
ESD Tolerance HBM (Silicon) –2000 – 2000 V
ESD Tolerance CDM (Silicon) –500 – 500 V
Latch-up – 200 – mA
Table 13. Power Supply Specifications
Parameter Conditions Min. Typical Max. Unit
VDD input Module Input 1.76 3.0 3.63 V
VDD Ripple Module Input Ripple (VDD) – – 100 mV
VBAT Input Internal to Module (not accessible) 1.90 3.0 3.6 V
PMU turn-on time VBAT is ready. – – 300 μs
Table 14. Shutdown Voltage (Brown Out)
Parameter
Specification
Unit
Min. Typ. Max.
V
SHUT
1.54 1.62 1.7 V