User's Manual

Table Of Contents
Document Number: 002-19043 Rev. PRELIMINARY Page 21 of 33
PRELIMINARY
CYBLE-413136-01
Digital I/O Characteristics
Current Consumption
In Tab le 14, current consumption measurements are taken at VBAT with the assumption that VBAT is connected to VDDIO and
LDOIN.
Table 13. Digital I/O Characteristics
Characteristics Symbol Minimum Typical Maximum Unit
Input low voltage (VDDO = 3.3V) V
IL
––0.8V
Input high voltage (VDDO = 3.3V) V
IH
2.0 V
Output low voltage V
OL
––0.4V
Output high voltage V
OH
VDDO – 0.4V V
Input low current I
IL
––1.0
μA
Input high current I
IH
––1.0
μA
Output low current (VDDO = 3.3V, V
OL
= 0.4V) I
OL
––2.0mA
Output high current (VDDO = 3.3V, V
OH
= 2.9V) I
OH
––4.0mA
Input capacitance C
IN
––0.4pF
Table 14. BLE Current Consumption
Product Operational Mode Conditions Typical Unit
CYW20719
(Silicon)
Receiving Receiver and baseband are both operating, 100% ON, silicon only. 5.8 mA
Transmitting Transmitter and baseband are both operating, 100% ON, silicon
only.
5.7 mA
PDS 512 KB SRAM memory retention, silicon only. 70
μA
Deep Sleep 16 KB SRAM memory retention, silicon only. 1
μA
HIDOFF Wakeup only from XRES.
No SRAM memory retention, silicon only.
350 nA
Connection, 1-s Avg. Average Power, 1-second connection interval, silicon only.
Deep Sleep mode enabled during non-TX/RX
17
μA
Connection, 4-s Avg. Average Power, 4-second connection interval, silicon only.
Deep Sleep mode enabled during non-TX/RX
5
μA
CYBLE-413136-01
(Module)
Receiving Receiver and baseband are both operating, 100% ON, module. TBD mA
Transmitting Transmitter and baseband are both operating, 100% ON, module.. TBD mA
PDS 512 KB SRAM memory retention, module. TBD
μA
Deep Sleep 16 KB SRAM memory retention, module. TBD
μA
HIDOFF Wakeup only from XRES.
No SRAM memory retention, module.
TBD nA
Connection, 1-s Avg. Average Power, 1-second connection interval, module.
Deep Sleep mode enabled during non-TX/RX
TBD
μA
Connection, 4-s Avg. Average Power, 4-second connection interval, module.
Deep Sleep mode enabled during non-TX/RX
TBD
μA