User's Manual

PRELIMINARY
CYBLE-214009-00
Document Number: 002-09714 Rev. ** Page 24 of 40
Memory
System Resources
Power-on-Reset (POR)
Note
5. It can take as much as 20 ms to write to flash. During this time, the device should not be reset, or flash operations will be interrupted and cannot be relied on to have
completed. Reset sources include the XRES pin, software resets, CPU lockup states and privilege violations, improper power supply levels, and watchdogs. Make
certain that these are not inadvertently activated.
Table 38. Flash DC Specifications
Parameter Description Min Typ Max Units Details/Conditions
V
PE
Erase and program voltage 1.71 5.5 V
T
WS48
Number of Wait states at 32–48 MHz 2 CPU execution from flash
T
WS32
Number of Wait states at 16–32 MHz 1 CPU execution from flash
T
WS16
Number of Wait states for 0–16 MHz 0 CPU execution from flash
Table 39. Flash AC Specifications
Parameter Description Min Typ Max Units Details/Conditions
T
ROWWRITE
[5]
Row (block) write time (erase and program) 20 ms Row (block) = 256 bytes
T
ROWERASE
[5]
Row erase time 13 ms
T
ROWPROGRAM
[5]
Row program time after erase 7 ms
T
BULKERASE
[5]
Bulk erase time (256 KB) 35 ms
T
DEVPROG
[5]
Total device program time 25 seconds
F
END
Flash endurance 100 K cycles
F
RET
Flash retention. T
A
55 °C, 100 K P/E cycles 20 years
F
RET2
Flash retention. T
A
85 °C, 10 K P/E cycles 10 years
Table 40. POR DC Specifications
Parameter Description Min Typ Max Units Details/Conditions
V
RISEIPOR
Rising trip voltage 0.80 1.45 V
V
FALLIPOR
Falling trip voltage 0.75 1.40 V
V
IPORHYST
Hysteresis 15 200 mV
Table 41. POR AC Specifications
Parameter Description Min Typ Max Units Details/Conditions
T
PPOR_TR
Precision power-on reset (PPOR) response
time in Active and Sleep modes
––1µs
Table 42. Brown-Out Detect
Parameter Description Min Typ Max Units Details/Conditions
V
FALLPPOR
BOD trip voltage in Active and Sleep modes 1.64 V
V
FALLDPSLP
BOD trip voltage in Deep Sleep 1.4 V
Table 43. Hibernate Reset
Parameter Description Min Typ Max Units Details/Conditions
V
HBRTRIP
BOD trip voltage in Hibernate 1.1 V