User's Manual

PRELIMINARY
CYBLE-224110-00
Document Number: 002-11264 Rev. *A Page 19 of 43
XRES
V
HYSCMOS
Input hysteresis CMOS 0.05 × V
DD
1
I
DIODE
Current through protection diode to
V
DD
/V
SS
100 µA
I
TOT_GPIO
Maximum total source or sink chip
current
200 mA
Table 14. GPIO DC Specifications (continued)
Parameter Description Min Typ Max Unit Details/Conditions
Table 15. GPIO AC Specifications
Parameter Description Min Typ Max Unit Details/Conditions
T
RISEF
Rise time in Fast-Strong mode 2 12 ns 3.3-V V
DDD
, C
LOAD
= 25 pF
T
FALLF
Fall time in Fast-Strong mode 2 12 ns 3.3-V V
DDD
, C
LOAD
= 25 pF
T
RISES
Rise time in Slow-Strong mode 10 60 ns 3.3-V V
DDD
, C
LOAD
= 25 pF
T
FALLS
Fall time in Slow-Strong mode 10 60 ns 3.3-V V
DDD
, C
LOAD
= 25 pF
F
GPIOUT1
GPIO Fout; 3.3V V
DD
5.5V
Fast-Strong mode
––33MHz
90/10%, 25 pF load, 60/40 duty
cycle
F
GPIOUT2
GPIO Fout; 1.7VV
DD
3.3V
Fast-Strong mode
16.7 MHz
90/10%, 25 pF load, 60/40 duty
cycle
F
GPIOUT3
GPIO Fout; 3.3V V
DD
5.5V
Slow-Strong mode
–– 7 MHz
90/10%, 25 pF load, 60/40 duty
cycle
F
GPIOUT4
GPIO Fout; 1.7V V
DD
3.3V
Slow-Strong mode
––3.5MHz
90/10%, 25 pF load, 60/40 duty
cycle
F
GPIOIN
GPIO input operating frequency
1.71V V
DD
5.5V
48 MHz 90/10% V
IO
Table 16. XRES DC Specifications
Parameter Description Min Typ Max Unit Details/Conditions
V
IH
Input voltage HIGH threshold 0.7 × V
DDD
V CMOS input
V
IL
Input voltage LOW threshold 0.3 × V
DDD
V CMOS input
R
PULLUP
Pull-up resistor 3.5 5.6 8.5 kΩ
C
IN
Input capacitance 3 pF
V
HYSXRES
Input voltage hysteresis 100 mV
I
DIODE
Current through protection diode to
V
DD
/V
SS
100 µA
Table 17. XRES AC Specifications
Parameter Description Min Typ Max Unit Details/Conditions
T
RESETWIDTH
Reset pulse width 1 µs