User's Manual

CY8CKIT-042-BLE-A Bluetooth® Low Energy (BLE) Pioneer Kit Guide, Doc. # 002-11468 Rev. *A 104
Hardware
5.1.9 Cypress Ferroelectric RAM (F-RAM)
The BLE Pioneer Baseboard contains the FM24V10-G F-RAM device (see Figure 5-18), which can
be accessed through I
2
C lines P5[0] and P5[1] of the PSoC 4 BLE/PRoC BLE Module. The F-RAM is
1-Mbit (128KB) with an I
2
C speed up to 1 Mbps. The I
2
C slave address of the F-RAM device is
seven bits wide, and the LSB two bits are configurable through physical pins and are hardwired to 00
on the board. By default, the address of the F-RAM device used on the BLE Pioneer Baseboard is
0x50. This address can be modified by changing the R32/R36 and R33/R37 pairs. The operating
voltage range of the F-RAM is between 2 V and 3.6 V. To prevent the application of 5 V from the
adjustable LDO regulator on the BLE Pioneer Baseboard, a MOSFET-based protection circuit similar
to the one used for the 3.3-V rail is connected between the output of the regulator and the VDD pin
of the F-RAM. The protection circuit cuts off the power to the F-RAM when the output of the regulator
is greater than 3.6 V.
Figure 5-18. Schematics and Board Highlight of F-RAM