1 Mbit nvSRAM Specification Sheet

CY14B101L
Document Number: 001-06400 Rev. *I Page 11 of 18
AutoStore or Power Up RECALL
Parameter Alt Description
CY14B101L
Unit
Min Max
t
HRECALL
[13]
t
RESTORE
Power up RECALL Duration 20 ms
t
STORE
[14, 15]
t
HLHZ
STORE Cycle Duration 12.5 ms
V
SWITCH
Low Voltage Trigger Level 2.65 V
t
VCCRISE
V
CC
Rise Time 150 μ s
Switching Waveforms
Figure 9. AutoStore/Power Up RECALL
V
CC
V
SWITCH
t
STORE
t
STORE
t
HRECALL
t
HRECALL
AutoStore
POWER-UP RECALL
Read & Write Inhibited
STORE occurs only
if a SRAM write
has happened
No STORE occurs
without atleast one
SRAM write
t
VCCRISE
Note Read and Write cycles are ignored during STORE, RECALL, and while Vcc is below V
SWITCH
Notes
13. t
HRECALL
starts from the time V
CC
rises above V
SWITCH
.
14. If an SRAM WRITE has not taken place since the last nonvolatile cycle, no STORE will take place.
15. Industrial Grade devices requires 15 ms max.
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