nvSRAM with Real Time Clock Specification Sheet

PRELIMINARY
CY14B104K, CY14B104M
Document #: 001-07103 Rev. *K Page 30 of 31
*I 2519319 06/20/08 GVCH/PYRS Added 20 ns access speed in “Features”
Added I
CC1
for tRC=20 ns for both industrial and Commercial temperature Grade
Updated Thermal resistance values for 44-TSOP II and 54-TSOP II packages
Added AC Switching Characteristics specs for 20 ns access speed
Added Software controlled STORE/RECALL cycle specs for 20 ns access speed
Updated ordering information and Part numbering nomenclature
*J 2600941 11/04/08 GVCH/PYRS Removed 15 ns access speed from “Features”
Changed part number from CY14B104K/CY14B104M to
CY14B104KA/CY14B104MA
Updated Logic block diagram
Updated footnote 1
Added footnote 2
Pin definition: Updated WE
, HSB and NC pin description
Page 4: Updated SRAM READ, SRAM WRITE, Autostore operation description
Page 4: Updated Hardware store operation and Hardware RECALL (Power up)
description
Footnote 1 and 8 referenced for Mode selection Table
Updated footnote 6
Page 6: updated Data protection description
Page 6: Updated Starting and stopping the oscillator description
Page 7: Updated Calibrating the clock description
Page 7: Updated Alarm description
Page 8: Added Flags register
Added footnote 10 and 11
Updated Figure 4: Removed RF register and Changed C
2
value from 56pF to
12pF
Updated Register Map Table 3
Updated Register map detail Table 4
Maximum Ratings: Added Max. Accumulated storage time
Changed Output short circuit current parameter name to DC output current
Changed I
CC2
from 6mA to 10mA
Changed I
CC4
from 6mA to 5mA
Changed I
SB
from 3mA to 5mA
Updated I
CC1,
I
CC3,
I
SB
and I
OZ
Test conditions
Changed V
CAP
voltage max value from 82uF to 180uF
Updated footnote 12 and 13
Added footnote 14
Added Data retention and Endurance Table
Updated Input Rise and Fall time in AC test Conditions
Changed tOCS value for minimum temperature from 10 to 2 sec
updated tOCS value for room temperature from 5 to 1sec
Referenced footnote 20 to t
OHA
parameter
Updated All switching waveforms
Updated footnote 20
Added Figure 11 (SRAM WRITE CYCLE:BHE
and BLE controlled)
Updated t
DELAY
value
Added V
HDIS
, t
HHHD
and t
LZHSB
parameters
Updated footnote 27
Added footnote 29
Software controlled STORE/RECALL Table: Changed t
AS
to t
SA
Changed t
GHAX
to t
HA
Changed t
HA
value from 1ns to 1ns
Added t
DHSB
parameter
Changed t
HLHX
to t
PHSB
Updated t
SS
from 70us to 100us
Added truth table for SRAM operations
Updated ordering information and part numbering nomenclature
Document Title: CY14B104K/CY14B104M 4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock
Document Number: 001-07103
Rev. ECN No.
Submission
Date
Orig. of
Change
Description of Change
[+] Feedback