4-Mbit nvSRAM Specification Sheet

PRELIMINARY
CY14B104LA, CY14B104NA
Document #: 001-49918 Rev. *A Page 9 of 23
AC Test Conditions
Input Pulse Levels ....................................................0V to 3V
Input Rise and Fall Times (10% - 90%)........................ <
3 ns
Input and Output Timing Reference Levels ....................1.5V
Data Retention and Endurance
Parameter Description Min Unit
DATA
R
Data Retention 20 Years
NV
C
Nonvolatile STORE Operation 200 K
Capacitance
In the following table, the capacitance parameters are listed.
[12]
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= 0 to 3.0V
7pF
C
OUT
Output Capacitance 7 pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
[12]
Parameter Description Test Conditions 48-FBGA 44-TSOP II 54-TSOP II Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, in accordance with EIA/JESD51.
28.82 31.11 30.73 °C/W
Θ
JC
Thermal Resistance
(Junction to Case)
7.84 5.56 6.08 °C/W
Figure 5. AC Test Loads
3.0V
OUTPUT
5 pF
R1
R2
789Ω
3.0V
OUTPUT
30 pF
R1
R2
789Ω
for tri-state specs
577Ω
577Ω
Note
12. These parameters are guaranteed but not tested.
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