Specifications

CY14B108K
CY14B108M
Document Number: 001-47378 Rev. *K Page 19 of 36
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Maximum accumulated storage time
At 150 C ambient temperature ................................. 1000 h
At 85 C ambient temperature ................................ 20 Years
Maximum junction temperature .................................. 150 C
Supply voltage on V
CC
relative to V
SS
...........–0.5 V to 4.1 V
Voltage applied to outputs
in High Z state .................................... –0.5 V to V
CC
+ 0.5 V
Input voltage ....................................... –0.5 V to V
CC
+ 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to V
CC
+ 2.0 V
Package power dissipation
capability (T
A
= 25°C) .................................................. 1.0 W
Surface mount Pb soldering
temperature (3 Seconds) ......................................... +260 C
DC output current (1 output at a time, 1s duration) .... 15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) ......................... > 2001 V
Latch up current .................................................... > 200 mA
Operating Range
Range Ambient Temperature V
CC
Industrial –40 C to +85 C 2.7 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions Min Typ
[17]
Max Unit
V
CC
Power supply 2.7 3.0 3.6 V
I
CC1
Average V
CC
current t
RC
= 25 ns
t
RC
= 45 ns
Values obtained without output loads
(I
OUT
= 0 mA)
––75
57
mA
mA
I
CC2
Average V
CC
current during
STORE
All inputs don’t care, V
CC
= Max.
Average current for duration t
STORE
––20mA
I
CC3
Average V
CC
current at
t
RC
= 200 ns, V
CC(Typ)
, 25 °C
All inputs cycling at CMOS levels.
Values obtained without output loads
(I
OUT
= 0 mA).
–40–mA
I
CC4
Average V
CAP
current during
AutoStore cycle
All inputs don’t care. Average current
for duration t
STORE
––10mA
I
SB
V
CC
standby current CE > (V
CC
– 0.2 V).
V
IN
< 0.2 V or > (V
CC
– 0.2 V).
W bit set to ‘0’. Standby current level
after nonvolatile cycle is complete.
Inputs are static. f = 0 MHz.
––10mA
I
IX
[18]
Input leakage current (except
HSB
)
V
CC
= Max, V
SS
< V
IN
< V
CC
–2 +2 A
Input leakage current (for HSB
)V
CC
= Max, V
SS
< V
IN
< V
CC
–200 +2 A
I
OZ
Off state output leakage current V
CC
= Max, V
SS
< V
OUT
< V
CC
,
CE
or OE > V
IH
or
BHE
/BLE > V
IH
or WE < V
IL
–2 +2 A
V
IH
Input HIGH voltage 2.0 V
CC
+ 0.5 V
V
IL
Input LOW voltage V
SS
– 0.5 0.8 V
V
OH
Output HIGH voltage I
OUT
= –2 mA 2.4 V
V
OL
Output LOW voltage I
OUT
= 4 mA 0.4 V
Notes
17. Typical values are at 25 °C, V
CC
= V
CC(Typ)
. Not 100% tested.
18. The HSB
pin has I
OUT
= -2 uA for V
OH
of 2.4 V when both active HIGH and LOW drivers are disabled. When they are enabled standard V
OH
and V
OL
are valid. This
parameter is characterized but not tested.