Specifications

CY14B108K
CY14B108M
Document Number: 001-47378 Rev. *K Page 9 of 36
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the Software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
or OE controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
Note Errata: AutoStore Disable feature does not work in the
device. For more information, see Errata on page 33.
AutoStore is re-enabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE or OE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
If the AutoStore function is disabled or re-enabled, a manual
STORE operation (hardware or software) must be issued to save
the AutoStore state through subsequent power-down cycles.
The part comes from the factory with AutoStore enabled and
0x00 written in all cells.
Data Protection
The CY14B108K/CY14B108M protects data from corruption
during low voltage conditions by inhibiting all externally initiated
STORE and write operations. The low voltage condition is
detected when V
CC
is less than V
SWITCH
. If the
CY14B108K/CY14B108M is in a write mode (both CE
and WE
are LOW) at power-up, after a RECALL or STORE, the write is
inhibited until the SRAM is enabled after t
LZHSB
(HSB to output
active). This protects against inadvertent writes during power-up
or brown out conditions.