User Guide

CY24713
Document #: 38-07396 Rev. *A Page 2 of 5
Absolute Maximum Conditions
Parameter Description Min Max Unit
V
DD
Supply Voltage –0.5 7.0 V
T
S
Storage Temperature
[2]
–65 125 °C
T
J
Junction Temperature – 125 °C
Digital Inputs V
SS
– 0.3 V
DD
+ 0.3 V
Digital Outputs referred to V
DD
V
SS
– 0.3 V
DD
+ 0.3 V
Electrostatic Discharge – 2000 V
Analog Input –0.5 7.0 V
Pullable Crystal Specifications
Parameter Description Condition Min Typ. Max Unit
F
NOM
Nominal crystal frequency Parallel resonance, funda-
mental mode, AT cut
–27–MHz
C
LNOM
Nominal load capacitance – 14 – pF
R
1
Equivalent series resistance (ESR) Fundamental mode – – 25 Ω
R
3
/R
1
Ratio of third overtone mode ESR to fundamen-
tal mode ESR
Ratio used because typical R
1
values are much less than the
maximum spec.
3––
DL Crystal drive level No external series resistor as-
sumed
–0.52.0mW
F
3SEPHI
Third overtone separation from 3*F
NOM
High side 300 – – ppm
F
3SEPLO
Third overtone separation from 3*F
NOM
Low side – – –150 ppm
C
0
Crystal shunt capacitance – – 7 pF
C
0
/C
1
Ratio of shunt to motional capacitance 180 – 250
C
1
Crystal motional capacitance 14.4 18 21.6 pF
Note
2. Rated for 10 years
Recommended Operating Conditions
Parameter Description Min Typ. Max Unit
V
DD
Operating Voltage 3.135 3.3 3.465 V
T
A
Ambient Temperature 0 – 70 °C
C
LOAD
Max. Load Capacitance – – 15 pF
t
PU
Power up time for all VDDs to reach minimum specified voltage (power
ramps must be monotonic)
0.05 – 500 ms
DC Electrical Characteristics
Parameter Description Conditions Min Typ. Max Unit
I
OH
Output High Current V
OH
= V
DD
– 0.5, V
DD
= 3.3V 12 24 – mA
I
OL
Output Low Current V
OL
= 0.5, V
DD
= 3.3V 12 24 – mA
C
IN
Input Capacitance – – 7 pF
I
IZ
Input Leakage Current – 5 – μA
f
ΔXO
VCXO pullability range ±150 – – ppm
V
VCXO
VCXO input range 0 – V
DD
V
I
VDD
Supply Current – 25 30 mA
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