Static RAM Specification Sheet

CY7C106D
CY7C1006D
Document #: 38-05459 Rev. *E Page 3 of 11
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
CC
Relative to GND
[3]
... –0.5V to +6.0V
DC Voltage Applied to Outputs
in High-Z State
[3]
...................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[3]
............................... –0.5V to V
CC
+ 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage .......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Operating Range
Range
Ambient
Temperature
V
CC
Speed
Industrial –40°C to +85°C 5V ± 0.5V 10 ns
Electrical Characteristics (Over the Operating Range)
Parameter Description Test Conditions
7C106D-10
7C1006D-10
Unit
Min Max
V
OH
Output HIGH Voltage I
OH
= –4.0 mA 2.4 V
V
OL
Output LOW Voltage I
OL
= 8.0 mA 0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
+ 0.5 V
V
IL
Input LOW Voltage
[3]
–0.5 0.8 V
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1 µA
I
OZ
Output Leakage Current GND < V
I
< V
CC
, Output Disabled –1 +1 µA
I
CC
V
CC
Operating Supply Current V
CC
= Max,
I
OUT
= 0 mA,
f = f
max
= 1/t
RC
100 MHz 80 mA
83 MHz 72 mA
66 MHz 58 mA
40 MHz 37 mA
I
SB1
Automatic CE Power-Down
Current—TTL Inputs
Max V
CC
, CE > V
IH
,
V
IN
> V
IH
or V
IN
< V
IL
, f = f
max
10 mA
I
SB2
Automatic CE Power-Down
Current—CMOS Inputs
Max V
CC
, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V, f=0
3mA
Note
3. V
IL
(min) = –2.0V and V
IH
(max) = V
CC
+ 1V for pulse durations of less than 5 ns.
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