Static RAM Specification Sheet

CY7C106D
CY7C1006D
Document #: 38-05459 Rev. *E Page 4 of 11
Capacitance
[4]
Parameter Description Test Conditions Max Unit
C
IN
: Addresses Input Capacitance T
A
= 25°C, f = 1 MHz, V
CC
= 5.0V 7 pF
C
IN
: Controls 10 pF
C
OUT
Output Capacitance 10 pF
Thermal Resistance
[4]
Parameter Description Test Conditions
300-Mil
Wide SOJ
400-Mil
Wide SOJ
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
59.16 58.76 °C/W
Θ
JC
Thermal Resistance
(Junction to Case)
40.84 40.54 °C/W
AC Test Loads and Waveforms
[5]
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
Rise Time: ≤ 3 ns
Fall Time: ≤ 3 ns
30 pF*
OUTPUT
Z = 50 Ω
50 Ω
1.5V
(b)
(a)
5V
OUTPUT
5 pF
(c)
R1 480Ω
R2
255Ω
High-Z characteristics:
INCLUDING
JIG AND
SCOPE
Notes
4. Tested initially and after any design or process changes that may affect these parameters.
5. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure (c).
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