DDR-II SRAM 2-Word Burst Architecture Specification Sheet

CY7C1316BV18, CY7C1916BV18
CY7C1318BV18, CY7C1320BV18
Document Number: 38-05621 Rev. *D Page 24 of 31
Output Times
t
CO
t
CHQV
C/C Clock Rise (or K/K in single
clock mode) to Data Valid
0.45 0.45 0.45 0.45 0.50 ns
t
DOH
t
CHQX
Data Output Hold after Output C/C
Clock Rise (Active to Active)
–0.45 –0.45 –0.45 –0.45 –0.50 ns
t
CCQO
t
CHCQV
C/C Clock Rise to Echo Clock Valid 0.45 0.45 0.45 0.45 0.50 ns
t
CQOH
t
CHCQX
Echo Clock Hold after C/C Clock
Rise
–0.45 –0.45 –0.45 –0.45 –0.50 ns
t
CQD
t
CQHQV
Echo Clock High to Data Valid 0.27 0.27 0.30 0.35 0.40 ns
t
CQDOH
t
CQHQX
Echo Clock High to Data Invalid –0.27 –0.27 –0.30 –0.35 –0.40 ns
t
CHZ
t
CHQZ
Clock (C/C) Rise to High-Z
(Active to High-Z)
[24, 25]
0.45 0.45 0.45 0.45 0.50 ns
t
CLZ
t
CHQX1
Clock (C/C) Rise to Low-Z
[24, 25]
–0.45 –0.45 –0.45 –0.45 –0.50 ns
DLL Timing
t
KC Var
t
KC Var
Clock Phase Jitter 0.20 0.20 0.20 0.20 0.20 ns
t
KC lock
t
KC lock
DLL Lock Time (K, C) 1024 1024 1024 1024 1024 Cycles
t
KC Reset
t
KC Reset
K Static to DLL Reset 30–30–30–30–30– ns
Switching Characteristics (continued)
Over the Operating Range
[20, 21]
Cypress
Parameter
Consortium
Parameter
Description
300 MHz 278 MHz 250 MHz 200 MHz 167 MHz
Unit
Min Max Min Max Min Max Min Max Min Max
Notes
24. t
CHZ
, t
CLZ
are specified with a load capacitance of 5 pF as in (b) of AC Test Loads and Waveforms on page 22. Transition is measured ±100 mV from steady-state voltage.
25. At any voltage and temperature t
CHZ
is less than t
CLZ
and t
CHZ
less than t
CO
.
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