ConsuMoBL Dual-Port Static RAM Specification Sheet

CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
Document #: 001-01638 Rev. *E Page 12 of 26
Electrical Characteristics for 3.0V Over the Operating Range
Parameter Description
CYDC256B16,
CYDC128B16,
CYDC064B16,
CYDC128B08,
CYDC064B08
CYDC256B16,
CYDC128B16,
CYDC064B16,
CYDC128B08,
CYDC064B08
Unit
-40 -55
P1 I/O
Voltage
P2 I/O
Voltage Min. Typ. Max. Min. Typ. Max.
V
OH
Output HIGH Voltage (I
OH
= –2 mA) 3.0V (any port) 2.1 2.1 V
V
OL
Output LOW Voltage (I
OL
= 2 mA) 3.0V (any port) 0.4 0.4 V
V
OL
ODR ODR Output LOW Voltage (I
OL
= 8 mA) 3.0V (any port) 0.2 0.2 V
V
IH
Input HIGH Voltage 3.0V (any port) 2.0 V
DDIO
+ 0.2
2.0 V
DDIO
+ 0.2
V
V
IL
Input LOW Voltage 3.0V (any port) –0.2 0.7 –0.2 0.7 V
I
OZ
Output Leakage Current 3.0V 3.0V –1 1 –1 1 µA
I
CEX
ODR ODR Output Leakage Current.
V
OUT
=V
CC
3.0V 3.0V –1 1 –1 1 µA
I
IX
Input Leakage Current 3.0V 3.0V –1 1 –1 1 µA
I
CC
Operating Current (V
CC
= Max.,
I
OUT
= 0 mA) Outputs Disabled
Ind. 3.0V 3.0V 49 70 42 60 mA
I
SB1
Standby Current (Both Ports TTL
Level) CE
L
and CE
R
≥ V
CC
– 0.2,
SEM
L
= SEM
R
= V
CC
– 0.2, f = f
MAX
Ind. 3.0V 3.0V 7 10 7 10 µA
I
SB2
Standby Current (One Port TTL
Level) CE
L
| CE
R
≥ V
IH
, f = f
MAX
Ind. 3.0V 3.0V 28 40 25 35 mA
I
SB3
Standby Current (Both Ports
CMOS Level) CE
L
& CE
R
≥
V
CC
− 0.2V, SEM
L
and SEM
R
>
V
CC
– 0.2V, f = 0
Ind. 3.0V 3.0V 6 8 6 8 µA
I
SB4
Standby Current (One Port CMOS
Level) CE
L
| CE
R
≥ V
IH
, f = f
MAX
[25]
Ind. 3.0V 3.0V 28 40 25 35 mA
Capacitance
[26]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= 3.0V
9pF
C
OUT
Output Capacitance 10 pF
Note:
26. Tested initially and after any design or process changes that may affect these parameters.
[+] Feedback