Datasheet

DS_E48SH12010_10212014
2
TECHNICAL SPECIFICATIONS
(T
A
=25°C, airflow rate=300 LFM, V
in
=48Vdc, nominal Vout unless otherwise noted.)
NOTES and CONDITIONS
E48SH12010 (Standard)
Min.
Typ.
Max.
Units
80
Vdc
100ms
100
Vdc
-40
85
°C
-55
125
°C
2250
Vdc
36
75
Vdc
33
34
35
Vdc
31
32
33
Vdc
1
2
3
Vdc
100% Load, 36Vin
3.9
A
90
mA
3
10
mA
1
A
2
s
P-P thru 12µH inductor, 5Hz to 20MHz
20
mA
120 Hz
60
dB
Vin=48V, Io=Io.max, Tc=2C
11.88
12.00
12.12
Vdc
Io=Io,min to Io,max
±10
±20
mV
Vin=36V to 75V
±10
±20
mV
Tc=-40°C to 115°C
±50
mV
over sample load, line and temperature
11.76
12.24
V
5Hz to 20MHz bandwidth
Full Load, 1µF ceramic, 10µF tantalum
40
80
mV
Full Load, 1µF ceramic, 10µF tantalum
10
20
mV
0
10
A
Output Voltage 10% Low
110
140
%
48V, 1F Tan & 1µF Ceramic load cap, 0.1A/µs
50% Io.max to 75% Io.max
110
200
mV
75% Io.max to 50% Io.max
110
200
mV
100
us
15
25
ms
20
30
ms
Full load; no overshoot of Vout at startup
5000
µF
92
93
%
92
93
%
2250
Vdc
10
1500
pF
185
200
225
kHz
Von/off at Ion/off=1.0mA
1.2
V
Von/off at Ion/off=0.0 µA
3
50
V
Von/off at Ion/off=1.0mA
1.2
V
Von/off at Ion/off=0.0 µA
3
50
V
Ion/off at Von/off=0.0V
1
mA
Logic High, Von/off=15V
50
uA
Pout max rated power, trim up curve refer to
figure4
-20
10
%
Pout max rated power, refer to figure4
10
%
Over full temp range; % of nominal Vout
13.8
16.2
V
Io=80% of Io, max; 300LFM @25C
2.2
M hours
Without heat spreader
25
grams
With heat spreader
36.6
grams
Refer to Figure 22 for Hot spot 1 location
(48Vin,80% Io, 200LFM,Airflow from Vin- to Vin+)
130
°C
Refer to Figure 24 for Hot spot 2 location
(48Vin,80% Io, 200LFM,Airflow from Vin- to Vin+)
118
°C
125
°C
Note: Please attach thermocouple on NTC resistor to test OTP function, the hot spots’ temperature is just for reference.