Datasheet

NTHD4508N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V 20 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 16 V 1.0
A
V
GS
= 0 V, V
DS
= 16 V, T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 12 V 100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A 0.6 1.2 V
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 4.5, I
D
= 3.1 A 60 75
m
()
V
GS
= 2.5, I
D
= 2.3 A 80 115
Forward Transconductance g
FS
V
DS
= 10 V, I
D
= 3.1 A 6.0 S
CHARGES AND CAPACITANCES
Input Capacitance C
ISS
V 0V f 10MH
180
pF
Output Capacitance C
OSS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 10 V
80
Reverse Transfer Capacitance C
RSS
V
DS
=
10
V
25
Total Gate Charge Q
G(TOT)
2.6 4.0
nC
Threshold Gate Charge Q
G(TH)
V
GS
= 4.5 V, V
D
S
= 10 V,
0.5
Gate−to−Source Charge Q
GS
V
GS
=
4
.
5
V
,
V
DS
=
10
V
,
I
D
= 3.1 A
0.6
Gate−to−Drain Charge Q
GD
0.7
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time t
d(ON)
5.0 10
ns
Rise Time t
r
V
GS
= 4.5 V, V
D
S
= 16 V,
15 30
Turn−Off Delay Time t
d(OFF)
V
GS
=
4
.
5
V
,
V
DS
=
16
V
,
I
D
= 3.1 A, R
G
= 2.5 
10 20
Fall Time t
f
3.0 6.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V, I
S
= 3.1 A 0.75 1.15 V
Reverse Recovery Time t
RR
12.5
ns
Charge Time ta
V
GS
= 0 V, I
S
= 1.5 A,
9.0
Discharge Time tb
V
GS
=
0
V
,
I
S
=
1
.
5
A
,
dI
S
/dt = 100 A/s
3.5
Reverse Recovery Charge Q
RR
6.0 nC
2. Pulse Test: Pulse Width  300 s, Duty Cycle  2%.
3. Switching characteristics are independent of operating junction temperatures.