Datasheet

NTHD4508N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
V
DS
= 0 V V
GS
= 0 V
510 10
400
300
200
100
0
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
021
4
1
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Q
G
, TOTAL GATE CHARGE (nC)
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
C
OSS
C
ISS
C
RSS
I
D
= 3.1 A
T
J
= 25°C
Q
G
0.5
2
3
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
5.0
0
Q
GD
101
10
1
100
R
G
, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
t, TIME (ns)
V
DD
= 16 V
I
D
= 2.3 A
V
GS
= 4.5 V
100
50
5
2.5
t
d(off)
t
d(on)
t
f
t
r
V
GS
V
DS
15
3
0.9
3
0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
7
0.75
0.45
0.3
1
4
2
7.5
1.20.6 1.05
5
6
2.51.5
Q
GS