Datasheet

2
1f
2
6f
2
2f
10
‡
A
A++A
log20=THD

22
ADC081S021
SNAS308G –APRIL 2005–REVISED MAY 2016 www.ti.com
Product Folder Links: ADC081S021
Submit Documentation Feedback Copyright © 2005–2016, Texas Instruments Incorporated
Device Support (continued)
SPURIOUS FREE DYNAMIC RANGE (SFDR)is the difference, expressed in dB, between the desired signal
amplitude to the amplitude of the peak spurious spectral component, where a spurious spectral
component is any signal present in the output spectrum that is not present at the input and may or
may not be a harmonic.
TOTAL HARMONIC DISTORTION (THD) is the ratio, expressed in dB or dBc, of the RMS total of the first five
harmonic components at the output to the RMS level of the input signal frequency as seen at the
output. THD is calculated as where A
f1
is the RMS power of
the input frequency at the output and A
f2
through A
f6
are the RMS power in the first 5 harmonic
frequencies.
THROUGHPUT TIME is the minimum time required between the start of two successive conversion. It is the
acquisition time plus the conversion time.
TOTAL UNADJUSTED ERROR is the worst deviation found from the ideal transfer function. As such, it is a
comprehensive specification which includes full scale error, linearity error, and offset error.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation see the following:
LP295x-N Series of Adjustable Micropower Voltage Regulators, SNVS764
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
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12.4 Trademarks
SPI, QSPI, MICROWIRE, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.