Datasheet

5
ADC081S021
www.ti.com SNAS308G –APRIL 2005–REVISED MAY 2016
Product Folder Links: ADC081S021
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(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.4 Thermal Information
THERMAL METRIC
(1)
ADC081S021
UNITDBV (SOT-23) NGF (WSON)
6 PINS 6 PINS
R
θJA
Junction-to-ambient thermal resistance 184.5 99.8 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 151.2 118.3 °C/W
R
θJB
Junction-to-board thermal resistance 29.7 68.9 °C/W
ψ
JT
Junction-to-top characterization parameter 29.8 6.6 °C/W
ψ
JB
Junction-to-board characterization parameter 29.1 69.2 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance — 14.8 °C/W
(1) Tested limits are ensured to TI's AOQL (Average Outgoing Quality Level).
(2) Data sheet minimum and maximum specification limits are specified by design, test, or statistical analysis.
7.5 Electrical Characteristics
Typical values correspond to T
A
= 25°C, and minimum and maximum limits apply over –40°C to 85°C operating temperature
range (unless otherwise noted). V
A
= 2.7 V to 5.25 V, f
SCLK
= 1 MHz to 4 MHz, f
SAMPLE
= 50 ksps to 200 ksps, and C
L
= 15 pF
(unless otherwise noted).
(1)
PARAMETER TEST CONDITIONS MIN
(2)
TYP MAX
(2)
UNIT
STATIC CONVERTER CHARACTERISTICS
Resolution with
no missing codes
8 Bits
INL Integral non-linearity
V
A
= 2.7 V to 3.6 V ±0.03 ±0.3 LSB
V
A
= 4.75 V to 5.25 V
T
A
= 25°C –0.03 0.04
LSB
T
A
= –40°C to 85°C ±0.3 ±0.3
DNL Differential non-linearity
V
A
= 2.7 V to 3.6 V ±0.03 ±0.2 LSB
V
A
= 4.75 V to 5.25 V
T
A
= 25°C –0.03 0.04
LSB
T
A
= –40°C to 85°C ±0.2 ±0.2
V
OFF
Offset error
V
A
= 2.7 V to 3.6 V –0.01 ±0.2 LSB
V
A
= 4.75 V to 5.25 V 0.03 ±0.2 LSB
GE Gain error
V
A
= 2.7 V to 3.6 V 0.04 ±0.4 LSB
V
A
= 4.75 V to 5.25 V 0.1 ±0.4 LSB
TUE Total unadjusted error
V
A
= 2.7 V to 3.6 V
T
A
= 25°C –0.065 0.055
LSB
T
A
= –40°C to 85°C ±0.3 ±0.3
V
A
= 4.75 V to 5.25 V
T
A
= 25°C –0.06 0.03
LSB
T
A
= –40°C to 85°C ±0.3 ±0.3
DYNAMIC CONVERTER CHARACTERISTICS
SINAD
Signal-to-noise
plus distortion ratio
V
A
= 2.7 V to 5.25 V, f
IN
= 100 kHz,
–0.02 dBFS
49 49.5 dBFS
SNR Signal-to-noise ratio
V
A
= 2.7 V to 5.25 V, f
IN
= 100 kHz,
–0.02 dBFS
49 49.6 dBFS
THD Total harmonic distortion
V
A
= 2.7 V to 5.25 V, f
IN
= 100 kHz,
–0.02 dBFS
–77 –65 dBFS
SFDR Spurious-free dynamic range
V
A
= 2.7 V to 5.25 V, f
IN
= 100 kHz,
–0.02 dBFS
65 68 dBFS
ENOB Effective number of bits
V
A
= 2.7 V to 5.25 V, f
IN
= 100 kHz,
–0.02 dBFS
7.8 7.9 Bits
IMD
Intermodulation distortion,
second order terms
V
A
= 5.25 V, f
a
= 103.5 kHz, f
b
= 113.5 kHz –83 dBFS
Intermodulation distortion,
third order terms
V
A
= 5.25 V, f
a
= 103.5 kHz, f
b
= 113.5 kHz –82 dBFS