Datasheet

Memory Organization

Memory Configuration and Block Diagram

Each page of memory can be individually programmed. Bits are programmed from one

through zero. The device is subsector, sector, or bulk-erasable, but not page-erasable.

Bits are erased from zero through one. The memory is configured as 33,554,432 bytes (8

bits each); 512 sectors (64KB each); 8192 subsectors (4KB each); and 131,072 pages (256

bytes each); and 64 OTP bytes are located outside the main memory array.

Figure 5: Block Diagram

HOLD#

W#/V

Control logic

High voltage

generator

I/O shift register

Address register

and counter

256 byte

data buffer

256 bytes (page size)

X decoder

Y decoder

Status

0000000h

01FFFFFFh

00000FFh

64 OTP bytes

DQ0

DQ1

DQ2

DQ3

3V, 256Mb: Multiple I/O Serial Flash Memory

Memory Organization

09005aef84566603

n25q_256mb_65nm.pdf - Rev. W 11/16 EN

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