Datasheet

Figure 14: READ ID and MULTIPLE I/O Read ID Commands
UID
Device
identification
Manufacturer
identification
High-Z
DQ1
MSB MSB
D
OUT
D
OUT
D
OUT
D
OUT
LSB
LSB
7 8
15
16
32
31
0
C
MSB
DQ0
LSB
Command
MSB
D
OUT
D
OUT
LSB
Extended (READ ID)
Dual (MULTIPLE I/O READ ID )
Quad (MULTIPLE I/O READ ID )
Don’t Care
3 4
7
8
15
0
C
MSB
DQ[1:0]
LSB
Command
Device
identification
Manufacturer
identification
MSB MSB
D
OUT
D
OUT
D
OUT
D
OUT
LSB
LSB
1 2
3
4
7
0
C
MSB
DQ[3:0]
LSB
Command
Device
identification
Manufacturer
identification
MSB MSB
D
OUT
D
OUT
D
OUT
D
OUT
LSB
LSB
Note:
1. The READ ID command is represented by the extended SPI protocol timing shown first.
The MULTIPLE I/O READ ID command is represented by the dual and quad SPI protocols
are shown below extended SPI protocol.
READ SERIAL FLASH DISCOVERY PARAMETER Command
To execute READ SERIAL FLASH DISCOVERY PARAMETER command, S# is driven
LOW. The command code is input on DQ0, followed by three address bytes and eight
dummy clock cycles (address is always 3 bytes, even for 4-byte address mode). The de-
vice outputs the information starting from the specified address. When the 2048-byte
boundary is reached, the data output wraps to address 0 of the serial Flash discovery
parameter table. The operation is terminated by driving S# HIGH at any time during da-
ta output.
The operation always executes in continuous mode so the read burst wrap setting in the
volatile configuration register does not apply.
Note: Data to be stored in the serial Flash discovery parameter area is still in the defini-
tion phase.
3V, 256Mb: Multiple I/O Serial Flash Memory
READ IDENTIFICATION Operations
09005aef84566603
n25q_256mb_65nm.pdf - Rev. W 11/16 EN
39
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