Datasheet
Figure 15: READ Command
Don’t Care
MSB
DQ[0]
LSB
Command
A[MAX]
A[MIN]
7 8 C
x
0
C
Extended
High-Z
DQ1
MSB
D
OUT
D
OUT
D
OUT
D
OUT
D
OUT
LSB
D
OUT
D
OUT
D
OUT
D
OUT
Note:
1. C
x
= 7 + (A[MAX] + 1).
READ MEMORY Operations Timing – Single Transfer Rate
Figure 16: FAST READ Command
7 8 C
x
0
C
MSB
DQ0
LSB
Command
A[MAX]
A[MIN]
3 4 C
x
0
C
MSB
DQ[1:0]
LSB
Command
A[MAX]
A[MIN]
MSB
D
OUT
D
OUT
D
OUT
D
OUT
D
OUT
LSB
Dummy cycles
1 2 C
x
0
C
MSB
DQ[3:0]
LSB
Command
A[MAX]
A[MIN]
MSB
D
OUT
D
OUT
D
OUT
LSB
Dummy cycles
Extended
MSB
D
OUT
D
OUT
D
OUT
D
OUT
D
OUT
LSB
D
OUT
D
OUT
D
OUT
D
OUT
Dummy cycles
Dual
Quad
DQ1
High-Z
Don’t Care
Note:
1. For extended protocol, C
x
= 7 + (A[MAX] + 1).
For dual protocol, C
x
= 3 + (A[MAX] + 1)/2.
For quad protocol, C
x
= 1 + (A[MAX] + 1)/4.
3V, 256Mb: Multiple I/O Serial Flash Memory
READ MEMORY Operations
09005aef84566603
n25q_256mb_65nm.pdf - Rev. W 11/16 EN
46
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.