Datasheet

Table 42: AC Characteristics and Operating Conditions (Continued)
Parameter Symbol Min Typ
1
Max Unit Notes
WRITE VOLATILE CONFIGURATION REGISTER cycle
time
t
WVCR – 40 – ns
WRITE VOLATILE ENHANCED CONFIGURATION
REGISTER cycle time
t
WRVECR – 40 – ns
WRITE NONVOLATILE CONFIGURATION REGISTER
cycle time
t
WNVCR – 0.2 3 s
WRITE EXTENDED ADDRESS REGISTER cycle time
t
WREAR – 40 – ns
PAGE PROGRAM cycle time (256 bytes)
t
PP – 0.5 5 ms 7
PAGE PROGRAM cycle time (n bytes) – int(n/8) ×
0.015
8
5 ms 7
PAGE PROGRAM cycle time, V
PP
= V
PPH
( 256 bytes) – 0.4 5 ms 7
PROGRAM OTP cycle time (64 bytes) – 0.2 – ms 7
Subsector ERASE cycle time
t
SSE – 0.25 0.8 s
Sector ERASE cycle time
t
SE – 0.7 3 s
Sector ERASE cycle time (with V
PP
= V
PPH
) – 0.6 3 s
Bulk ERASE cycle time
t
BE – 240 480 s
Bulk ERASE cycle time (with V
PP
= V
PPH
) – 200 480 s
Notes:
1. Typical values given for T
A
= 25°C.
2.
t
CH +
t
CL must add up to 1/
f
C.
3. Value guaranteed by characterization; not 100% tested.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS
REGISTER WRITE is set to 1.
6. V
PPH
should be kept at a valid level until the PROGRAM or ERASE operation has comple-
ted and its result (success or failure) is known.
7. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained with one sequence including all the bytes versus several sequences
of only a few bytes (1 < n < 256).
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4
int(15.3) = 16.
3V, 256Mb: Multiple I/O Serial Flash Memory
AC Characteristics and Operating Conditions
09005aef84566603
n25q_256mb_65nm.pdf - Rev. W 11/16 EN
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