Datasheet

• Corrected timing diagram notes in READ MEMORY Operations

• Corrected timing diagram notes in PROGRAM Operations

• Changed WIP = 1 to WIP = 0 in Power-Up Timing diagram in Power Up and Power

Down

Rev. D – 05/11

• Micron rebrand

Rev. C – 11/10

• Added Reset Enable; Read Extended Address Register, Dual I/O; Reset Enable and Re-

set Memory, Dual I/O; Read Extended Address Register, Quad I/O; Reset Enable and

Reset Memory, Quad I/O

Rev. B – 08/10

• Added information to clarify 4-Byte Address Mode; added reset information, includ-

ing the Reset Enable figure and new rows the Reset Conditions table

Rev. A – 06/10

• Initial release

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Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

3V, 256Mb: Multiple I/O Serial Flash Memory

Revision History

09005aef84566603

n25q_256mb_65nm.pdf - Rev. W 11/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.