Datasheet

ManualsBrandsDiodes Incorporated ManualsDiscrete SemiconductorsMOSFET N, 20 V 1 A 0.290 W SOT-323

DMG1012UW

Document number: DS31859 Rev. 3 - 2

1 of 6

www.diodes.com

September 2013

DMG1012UW

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2KV

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMG1012UW-7

SOT-323

3000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year

2009

2010

2011

2012

2013

2014

2015

Code

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

TOP VIEW

Source

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Gate

Drain

TOP VIEW

G S

ESD PROTECTED TO 2kV

NA1 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y o r Y̅ = Year (ex: A = 2013)

M = Month (ex: 9 = September)

NA1

Chengdu A/T Site

Shanghai A/T Site

Summary of content (6 pages)

PAGE 1
DMG1012UW N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2KV • • • • • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound.
PAGE 2
DMG1012UW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Unit V V IDM Symbol PD RθJA TJ, TSTG Max 0.29 425 -55 to +150 Unit W °C/W °C TA = +25°C TA = +85°C Steady State Continuous Drain Current (Note 5) Value 20 ±6 1.0 0.
PAGE 3
DMG1012UW 1.5 1.5 VGS = 8.0V VGS = 4.5V 1.2 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.2 VGS = 2.5V VGS = 2.0V 0.9 0.6 VGS = 1.5V 0.3 VDS = 5V 0.9 0.6 TA = 150°C TA = 125°C 0.3 TA = 85°C TA = 25°C TA = -55°C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 5 0.7 0.6 0.5 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0.1 0 0 0.3 0.6 0.9 1.2 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs.
PAGE 4
DMG1012UW VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.6 10 IS, SOURCE CURRENT (A) 8 1.2 0.8 ID = 250µA 0.4 6 TA = 25°C 4 2 0 -50 0 0.2 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 100 C, CAPACITANCE (pF) Ciss 10 C oss Crss 1 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 0.4 0.6 0.8 1.0 V SD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.
PAGE 5
DMG1012UW Package Outline Dimensions A SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 0.95 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm B C G H K M J L D Suggested Pad Layout Y Z C X DMG1012UW Document number: DS31859 Rev. 3 - 2 Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E 5 of 6 www.diodes.
PAGE 6
DMG1012UW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.