Datasheet

ManualsBrandsDIODES INCORPORATED ManualsFETsDMG9N65CTI, MOSFET

DMG9N65CTI

Document number: DS36027 Rev. 4 - 2

1 of 5

www.diodes.com

February 2015

DMG9N65CTI

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

Package

= +25°C

650V

1.3Ω @ V

= 10V

ITO-220AB

9.0A

Description

This new generation complementary dual MOSFET features low

on-resistance and fast switching, making it ideal for high-efficiency

power management applications.

Applications

 Motor Control

 Backlighting

 DC-DC Converters

 Power Management Functions

Features

 Low Input Capacitance

 High BVDss Rating for Power Application

 Low Input/Output Leakage

 Lead-Free Finish; RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: ITO-220AB

 Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

 Terminals: Matte Tin Finish Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram Below

 Weight: ITO-220AB – 1.85 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMG9N65CTI

ITO-220AB

50 pieces/tube

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

Equivalent Circuit

Top View

Pin Out Configuration

Top View

Bottom View

9N65CTI = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 13 = 2013)

WW = Week (01 - 53)

ITO-220AB

YYWW AB

9N65CTI

ITO-220AB

Summary of content (5 pages)

PAGE 1
DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) Package 650V 1.3Ω @ VGS = 10V ITO-220AB       ID TC = +25°C 9.0A Description Low Input Capacitance High BVDss Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free.
PAGE 2
DMG9N65CTI Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Notes 5 & 6) TC = +25°C Steady State VGS = 10V TC = +70°C Pulsed Drain Current (Note 7) 10µs pulse, pulse duty cycle<=1% Avalanche Current (Note 8) VDD = 100V, VGS = 10V, L = 60mH Repetitive avalanche energy (Note 8) VDD = 100V, VGS = 10V, L = 60mH Symbol VDSS VGSS Value 650 ±30 9.0 7.0 30 2.
PAGE 3
DMG9N65CTI 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 10V 4 8 12 16 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 1.5 1.0 VGS = 10V VGS = 20V 0.5 0 0 2 4 6 8 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 3.0 2.5 VGS = 10 V ID = 5A 2.0 VGS = 15V ID = 10A 1.5 1.0 0.5 0 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig.
PAGE 4
DMG9N65CTI 10 8 IS, SOURCE CURRENT (V) VGS(th), GATE THRESHOLD VOLTAGE (V) 6 5 ID = 1mA 4 ID = 250µA 3 TA = 25°C 6 4 2 2 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
PAGE 5
DMG9N65CTI IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).