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DMMT5551/DMMT5551S

MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

DS30436 Rev. 8 - 2 1 of 4

www.diodes.com

DMMT5551/DMMT5551S

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (DMMT5401)

• Ideal for Low Power Amplification and Switching

• Intrinsically Matched NPN Pair (Note 1)

• 2% Matched Tolerance, h

, V

CE(SAT)

, V

BE(SAT)

• Lead Free/RoHS Compliant (Note 4)

• "Green" Device (Note 5 and 6)

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, "Green" Molding

Compound, Note 7. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over

Copper leadframe).

• Marking Information: K4R & K4T, See Page 3

• Ordering & Date Code Information: See Page 3

• Weight: 0.006 grams (approximate)

SOT-26

Dim Min Max Typ

A 0.35 0.50 0.38

B 1.50 1.70 1.60

C 2.70 3.00 2.80

⎯ ⎯

0.95

⎯ ⎯

0.55

H 2.90 3.10 3.00

J 0.013 0.10 0.05

K 1.00 1.30 1.10

L 0.35 0.55 0.40

M 0.10 0.20 0.15

0° 8°

⎯

All Dimens ons in mm i

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic

Symbol Value Unit

Collector-Base Voltage

CBO

180 V

Collector-Emitter Voltage

CEO

160 V

Emitter-Base Voltage

EBO

6.0 V

Collector Current - Continuous (Note 2)

200 mA

Power Dissipation (Note 2, 3)

300 mW

Thermal Resistance, Junction to Ambient (Note 2)

417 °C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Notes: 1. Built with adjacent die from a single wafer.

2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf.

3. Maximum combined dissipation.

4. No purposefully added lead.

5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DMMT5551S

(K4T Marking Code)

DMMT5551

(K4R Marking Code)

Summary of content (4 pages)

PAGE 1
DMMT5551/DMMT5551S MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • • A Epitaxial Planar Die Construction Complementary PNP Type Available (DMMT5401) Ideal for Low Power Amplification and Switching Intrinsically Matched NPN Pair (Note 1) 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) Lead Free/RoHS Compliant (Note 4) "Green" Device (Note 5 and 6) B C H Mechanical Data • • • • • • • • • Case: SOT-26 Case Material: Molded Plastic, "Green" Molding Compound, Note 7.
PAGE 2
Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO 180 160 6.0 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ 50 Emitter Cutoff Current ON CHARACTERISTICS (Note 7) IEBO ⎯ 50 V V V nA μA nA DC Current Gain (Note 8) hFE 80 80 30 Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 250 ⎯ 0.15 0.
PAGE 3
1,000 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V hFE, DC CURRENT GAIN TA = 150°C 100 TA = 25°C TA = -50°C 10 1 1 VCE = 5V 0.9 TA = -50°C 0.8 0.7 0.6 TA = 25°C 0.5 0.4 TA = 150°C 0.3 0.2 0.1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1,000 100 10 1 1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs.
PAGE 4
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others.