Datasheet

ManualsBrandsDIODES INCORPORATED ManualsFETsDMN5L06DWK-7, MOSFET

DMN5L06DWK

NEW PRODUCT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Dual N-Channel MOSFET

• Low On-Resistance (1.0V max)

• Very Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected up to 2kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN5L06DWK-7

SOT363

3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2006

2007

2008

…

2012

2013

2014

2015

2016

2017

2018

2019

Code

…

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

SOT363

Top View

Internal Schematic

DAB = Marking Code

YM = Date Code Marking

Y = Year ex: T = 2006

M = Month ex: 9 = September

ESD PROTECTED TO 2kV

DAB YM

AB YM

DMN5L06DWK

Document number: DS30930 Rev. 6 - 2

1 of 6

www.diodes.com

August 2014

Summary of content (6 pages)

PAGE 1
DMN5L06DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance (1.0V max) Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected up to 2kV • • • • • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.
PAGE 2
DMN5L06DWK Maximum Ratings @TA = +25°C unless otherwise specified Characteristic NEW PRODUCT Drain Source Voltage Gate-Source Voltage Drain Current Symbol VDSS VGSS Unit V V ID Value 50 ±20 305 800 Symbol PD RθJA TJ, TSTG Value 250 500 -65 to +150 Unit mW °C/W °C Continuous Pulsed (Note 6) mA Thermal Characteristics @TA = +25°C unless otherwise specified Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Ch
PAGE 3
NEW PRODUCT DMN5L06DWK VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ( Ω) 10 0 -50 75 100 125 150 -25 25 50 0 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs.
PAGE 4
IDR, REVERSE DRAIN CURRENT (A) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 250 PD, POWER DISSIPATION (mW) NEW PRODUCT DMN5L06DWK 200 150 100 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (°C) Fig.
PAGE 5
DMN5L06DWK Package Outline Dimensions NEW PRODUCT A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DMN5L06DWK Document number: DS30930 Rev. 6 - 2 5 of 6 www.diodes.
PAGE 6
DMN5L06DWK NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).