Datasheet

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DNBT8105

Document number: DS30513 Rev. 10 - 2

1 of 5

www.diodes.com

June 2011

DNBT8105

1A NPN SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideal for Medium Power Amplification and Switching

• High Collector Current Rating

• Complementary Version Available (DPBT8105)

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green Device" (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.008 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DNBT8105-7 SOT-23 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code R S T U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View Device Schematic

K81 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: S = 2005)

M = Month (ex: 9 = September)

K81

Summary of content (5 pages)

PAGE 1
DNBT8105 1A NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Collector Current Rating Complementary Version Available (DPBT8105) Lead Free By Design/RoHS Compliant (Note 1) "Green Device" (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound.
PAGE 2
DNBT8105 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value 80 60 5 1 2 Unit V V V A A Symbol PD RθJA TJ, TSTG Value 600 209 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Tempe
PAGE 3
DNBT8105 350 800 VCE = 5V PD, POWER DISSIPATION (mW) 700 300 hFE, DC CURRENT GAIN 600 500 400 300 200 100 250 TA = 85ºC 200 TA = 25ºC 150 50 RθJA = 209 °C/W 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) 200 300 350 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) 250 200 TA = 125ºC 150 TA = 85ºC 100 TA = 25ºC 50 300 250 200 150 100 50 0 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig.
PAGE 4
DNBT8105 120 CAPACITANCE (pF) 100 80 60 40 20 0 10 15 5 20 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics 0 Package Outline Dimensions A SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.
PAGE 5
DNBT8105 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.