Datasheet

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V
DS
*R
DS(on)
=2Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
60 V
Continuous Drain Current at T
amb
=25°C I
D
450 mA
Pulsed Drain Current I
DM
8A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
60 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.8 2.4 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
500
100
nA
µA
V
DS
=60 V, V
GS
=0
V
DS
=48 V, V
GS
=0V,
T=125°C
(2)
On-State Drain Current(1) I
D(on)
2AV
DS
=18V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
2
Ω
V
GS
=10V,I
D
=1A
Forward Transconductance
(1)(2)
g
fs
300 mS V
DS
=18V,I
D
=1A
Input Capacitance (2) C
iss
75 pF
Common Source Output
Capacitance (2)
C
oss
45 pF V
DS
=18 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
20 pF
E-Line
TO92 Compatible
ZVN2106A
3-361
D
G
S
TYPICAL CHARACTERISTICS
VDS - Drain Source Voltage (Volts)
I
D(
O
n
)
-On-S
t
ate
Drain Curren
t
(Amps)
01 2 3 4 5
Saturation Characteristics
5V
VGS=
10V
7V
8V
6V
4V
3V
0
0246810
1.6
1.2
1.4
1.8
2.0
V
DS-
Drain Source
Voltage (Volts)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
ID=
1A
0.5A
0.25A
9V
On-resistance v gate-source voltage
VGS-Gate Source Voltage (Volts)
R
DS(ON)
-Drain Source On-Resistance
(
Ω
)
1234567891020
ID=
1A
0.5A
0.25A
0.1
1
10
Normalised R DS(on) and V GS(th) vs Temperature
Normalis
e
d R
DS(
o
n)
a
n
d V
GS(th)
-40
-20 0 20 40 60 80
120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n
-
S
o
u
rc
e R
es
i
s
ta
n
c
e R
D
S(o
n
)
G
ate
T
h
res
h
o
l
d
V
o
l
t
ag
e
V
GS(
th
)
Tj-Junction Temperature (C°)
0.4
-80
-60
0
4
3
1
2
0.6
0.2
0.4
0.8
1.0
Transfer Characteristics
I
D(
O
n
)
-On-S
t
ate
Drain Curren
t
(A
m
ps)
V
GS-
Gate Source
Voltage (Volts)
012345678910
VDS=
10V
2
0
4
3
1
ID=1A
VGS=10V
ID=1mA
VGS=VDS
Transconductance v drain current
ID- Drain Current (Amps)
g
fs
-
T
r
an
sc
o
nd
ucta
nce (S)
01 2 3 4 5
0.7
0.6
0.4
0.1
0
0.2
0.5
0.3
VDS=10V
ZVN2106A
3-362