Manual

1N4448HLP
Document number: DS30590 Rev. 12 - 2
2 of 5
www.diodes.com
March 2012
© Diodes Incorporated
1N4448HLP
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
80 V
RMS Reverse Voltage
V
R
(
RMS
)
57 V
Forward Continuous Current
I
FM
300 mA
Average Rectified Output Current
I
O
95 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μ
s
@ t = 1.0s
I
FSM
2.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
250 mW
Thermal Resistance Junction to Ambient (Note 5)
R
θ
JA
500
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Conditions
Reverse Breakdown Voltage (Note 6)
V
(
BR
)
R
80
⎯
V
I
R
= 100μA
Forward Voltage
V
F
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Peak Reverse Current (Note 6)
I
R
⎯
100
50
30
25
nA
μA
μA
nA
V
R
= 80V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
Total Capacitance
C
T
⎯
3.0 pF
V
R
= 0.5V, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
4.0 ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.