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2DC4617QLP

Document number: DS31439 Rev. 4 - 2

1 of 5

www.diodes.com

February 2011

2DC4617QLP

50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Ultra-Small Leadless Surface Mount Package

• Complementary PNP Type Available (2DA1774QLP)

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free, "Green" Device (Note 2)

• Qualified to AEC-Q101Standards for High Reliability

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0008 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

2DC4617QLP-7 8D 7 8 3,000

2DC4617QLP-7B 8D 7 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

Device Schematic

Bottom View

DFN1006-3

Device Symbol

8D = Product Type Marking Code

2DC4617QLP-7 2DC4617QLP-7B

Top View

Bar Denotes Base

and Emitter Side

Top View

Dot Denotes

Collector Side

8D8D

Summary of content (5 pages)

PAGE 1
2DC4617QLP 50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Ultra-Small Leadless Surface Mount Package Complementary PNP Type Available (2DA1774QLP) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free, "Green" Device (Note 2) Qualified to AEC-Q101Standards for High Reliability • • • Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound.
PAGE 2
DC4617QLP Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Collector Current Symbol VCBO VCEO VEBO IC ICM Value 50 50 5.
PAGE 3
2DC4617QLP 300 100 IC, COLLECTOR CURRENT (mA) PD , POWER DISSIPATION (mW) IB = 0.5mA 250 200 150 100 50 RθJA = 500 °C/W IB = 0.4mA IB = 0.3mA 60 IB = 0.2mA 40 IB = 0.1mA 20 0 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 0 150 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 5 0.5 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 400 hFE, DC CURRENT GAIN 80 300 200 100 IC/IB = 10 0.
PAGE 4
2DC4617QLP Package Outline Dimensions A DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout C X1 X G2 G1 Y Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z 2DC4617QLP Document number: DS31439 Rev. 4 - 2 4 of 5 www.diodes.
PAGE 5
2DC4617QLP IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).