Instruction Manual

74HC86
Document number: DS35325 Rev. 3 - 2
4 of 9
www.diodes.com
January 2013
© Diodes Incorporated
74HC86
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Test Conditions
V
CC
T
A
= -40°C to +85°C T
A
= -40°C to +125°C
Unit
Min Max Min Max
V
IH
High-level Input Voltage
2.0V 1.5 1.5
V
4.5V 3.15 3.15
6.0V 4.2 4.2
V
IL
Low-level input voltage
2.0V 0.5 0.5
V
4.5V 1.35 1.35
6.0V 1.8 1.8
V
OH
High-level Output
Voltage
I
OH
= -20μA
2.0V 1.9 1.9
V
I
OH
= -20μA
4.5V 4.4 4.4
I
OH
= -20μA
6.0V 5.9 5.9
I
OH
= -4.0mA
4.5V 3.84 3.7
I
OH
= -5.2mA
6.0V 5.34 5.2
V
OL
Low-level Output
Voltage
I
OL
= 20μA
2.0V 0.1 0.1
V
I
OL
= 20μA
4.5V 0.1 0.1
I
OL
= 20μA
6.0V 0.1 0.1
I
OL
= 4mA
4.5V 0.33 0.44
I
OL
= 5.2mA
6.0V 0.33 0.44
I
I
Input Current
V
I
=GND to 5.5V
6.0V ± 1 ± 1 μA
I
CC
Supply Current
V
I
= GND or V
CC
, I
O
=
0
6.0V 20 40 μA
Switching Characteristics
Symbol Parameter
Test
Conditions
V
CC
T
A
= +25°C
-40°C to +85°C -40°C to +125°C
Unit
Min Typ. Max
Max Max
t
PD
Propagation
Delay A
N
to Y
N
Figure 1
C
L
= 50pF
2.0V — 25 90 115 135
ns
4.5V — 9 18 23 27
6.0V — 7 15 20 23
t
t
Transition time
Figure 1
C
L
= 50pF
2.0V — 19 75 95 110
ns
4.5V — 7 15 19 22
6.0V — 6 13 16 19
Operating Characteristics (@T
A
= +25°C, unless otherwise specified.)
Parameter Test Conditions
V
CC
= 6V
Unit
Typ
C
pd
Power Dissipation
Capacitance per Gate
f = 1MHz 25 pF
C
I
Input Capacitance
V
I
= V
CC
– or GND
4 pF