Manual

AP2331
0.2A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH
AP2331
Document Number: DS35529 Rev. 4 - 2
3 of 11
www.diodes.com
May 2012
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics (T
A
= 25°C, V
IN
= +5.0V, unless otherwise stated.)
Symbol Parameter Test Conditions (Note 5) Min Typ. Max Unit
V
UVLO
Input UVLO
V
IN
rising
2.35 2.65 V
I
Q
Input quiescent current
Above UVLO, I
OUT
= 0
85 125 µA
I
REV
Reverse leakage current
V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
0.01 0.10 µA
R
DS(ON)
Switch on-resistance
V
IN
= 5V, I
OUT
= 0.2A
100 250 350 mΩ
I
LIMIT
Over-load current limit
V
IN
= 5V, V
OUT
= 4V
0.3 0.4 0.5 A
I
OS
Short-circuit current OUT shorted to ground 0.3 0.4 0.5 A
I
ROCP
Reverse-current trigger point
V
IN
= 5.0V, V
OUT
= 5.2V
0.20 0.25 A
T
TRIG
Deglitch time from reverse current trigger
to MOSFET turn off
(Note 6) 0.5 0.7 1.0 ms
V
OVP
Output over-voltage trip point (Note 7) 5.3 5.6 V
T
OVP
Debounce time from output over-voltage
to MOSFET turn off
15 µs
V
REC
Recovery after turn-off from ROCP and
OVP
101%
V
IN
T
ON
Output turn-on time (Note 8)
C
L
= 0.1µF, R
LOAD
= 20Ω
(UVLO to 90% V
OUT-NOM
)
0.7 ms
T
SHDN
Thermal shutdown threshold
V
IN
= 2.7V to 5.2V
150 °C
T
HYS
Thermal shutdown hysteresis 20 °C
θ
JA
Thermal Resistance Junction-to-Ambient
(Note 9)
SOT23 215
o
C/W
SC59 255
o
C/W
Notes: 5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
6. When reverse current triggers at I
ROCP
= 0.20A, the reverse current is continuously clamped at I
ROCP
for 0.7ms deglitch time until MOSFET is
turned off.
7. During output over-voltage protection, the output draws approximately 60µA current.
8. Since the output turn-on slew rate is dependent on input supply slew rate, this limit is only applicable for input supply slew rate between V
IN
/0.2ms to
V
IN
/1ms.
9. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.