Owner manual
AP2552/AP2553/AP2552A/AP2553A
Document number: DS35404 Rev. 8 - 2
5 of 16
www.diodes.com
February 2014
© Diodes Incorporated
A
P2552/ AP2553/ AP2552A/ AP2553A
Electrical Characteristics (@T
A
= +25°C, V
IN
= 2.7V to 5.5V, V
EN
= 0V or V
EN
= V
IN
, R
FAULT
= 10k, unless otherwise specified.)
Symbol Parameter Test Conditions (Note 7) Min Typ Max Unit
Supply
V
UVLO
Input UVLO
V
IN
rising
2.4 2.65 V
V
UVLO
Input UVLO Hysteresis
V
IN
decreasing
25
mV
I
SHDN
Input Shutdown Current
V
IN
= 5.5V, disabled, OUT = open
0.1 1 µA
I
Q
Input Quiescent Current
V
IN
= 5.5V, enabled, OUT = open, R
LIM
= 20k
100 140 µA
V
IN
= 5.5V, enabled, OUT = open, R
LIM
= 210k
80 120 µA
I
REV
Reverse Leakage Current
Disabled, V
IN
= 0V, V
OUT
= 5.5V, I
REV
at V
IN
0.01 1 µA
Power Switch
R
DS(ON)
Switch On-Resistance
SOT26 package,
T
J
= +25°C, V
IN
= 5.0V
70 95
m
-40°C T
A
+85°C
135
U-DFN2020-6 package
T
J
= +25°C, V
IN
= 5.0V
80 105
-40°C T
A
+85°C
150
t
R
Output Turn-On Rise Time
V
IN
= 5.5V, C
L
= 1µF, R
LOAD
= 100. See Figure 1
1.1 1.5 ms
V
IN
= 2.7V, C
L
= 1µF, R
LOAD
= 100.
0.7 1 ms
t
F
Output Turn-Off Fall Time
V
IN
= 5.5V, C
L
= 1µF, R
LOAD
= 100. See Figure 1
0.1
0.5 ms
V
IN
= 2.7V, C
L
= 1µF, R
LOAD
= 100.
0.1
0.5 ms
Current Limit
I
LIMIT
Current-Limit Threshold
(maximum DC output current),
V
OUT
= V
IN
-0.5V
R
LIM
= 10k -40°C T
A
+85°C
2200 2365 2542
mA
R
LIM
= 15k -40°C T
A
+85°C
1540 1632 1730
R
LIM
= 20k
T
J
= +25°C
1180 1251 1326
-40°C T
A
+85°C
1160 1251 1340
R
LIM
= 49.9k
T
J
= +25°C
500 530 562
-40°C T
A
+85°C
485 529 573
R
LIM
= 210k
121 142 162
I
LIM
shorted to IN or GND
50 75 100
I
SHORT
Short-Circuit Current Limit, OUT
Connected to GND
R
LIM
= 10k
2620
mA
R
LIM
= 15k
1820
R
LIM
= 20k
1380
R
LIM
= 49.9k
570
R
LIM
= 210k
150
I
LIM
shorted to IN or GND
75
t
SHORT
Short-Circuit Response Time
V
OUT
= 0V to I
OUT
= I
LIMIT
(OUT shorted to ground)
See Figure 2
2
µs
Enable Pin
I
LEAK-EN
EN Input Leakage Current
V
IN
= 5V, V
EN
= 0V and 6V
-0.5
0.5 µA
t
ON
Turn-On Time
C
L
= 1µF, R
L
= 100. See Figure 1
3 ms
t
OFF
Turn-Off Time
C
L
= 1µF, R
L
= 100. See Figure 1
1 ms
Output Discharge
R
DIS
Discharge Resistance (Note 8)
V
IN
= 5V, disabled, I
OUT
=1mA
600
R
DIS_LATCH
Discharge Resistance During
Latch-Off
V
IN
= 5V, latch-off, AP2552A/53A only
1000
Notes: 7. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
8. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when V
IN
< V
UVLO
).
The discharge function offers a resistive discharge path for the external storage capacitor for limited time.