Instruction Manual

DS30429 Rev. 3 - 2
2 of 4
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DCX (LO-R1) H
© Diodes Incorporated
NEW PRODUCT
Maximum Ratings PNP Section @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage
V
CC
-50 V
Input Voltage DCX122LH
DCX142JH
V
IN
+5 to -6
+5 to -6
V
Input Voltage DCX122TH
DCX142TH
V
EBO (MAX)
-5 V
Output Current All
I
C
-100 mA
Power Dissipation (Note 1, 2)
P
d
150 mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics NPN Section @T
A
= 25°C unless otherwise specified R1, R2 Types
Characteristic Symbol Min Typ Max Unit Test Condition
DCX122LH
DCX142JH
V
l(off)
0.3
0.3
⎯ ⎯
V
V
CC
= 5V, I
O
= 100μA
Input Voltage
DCX122LH
DCX142JH
V
l(on)
⎯ ⎯
2.0
2.0
V
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
Output Voltage
V
O(on)
⎯ ⎯
0.3V V
I
O
/I
l
= 5mA/0.25mA
Input Current
DCX122LH
DCX142JH
I
l
⎯ ⎯
28
13
mA
V
I
= 5V
Output Current
I
O(off)
⎯ ⎯
0.5
μA
V
CC
= 50V, V
I
= 0V
DC Current Gain
DDCX122LH
DDCX142JH
G
l
56
56
⎯ ⎯ ⎯
V
O
= 5V, I
O
= 10mA
Gain-Bandwidth Product*
f
T
⎯
200
⎯
MHz
V
CE
= 10V, I
E
= 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section @T
A
= 25°C unless otherwise specified R1-Only
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50
⎯ ⎯
V
I
C
= 50μA
Collector-Emitter Breakdown Voltage
BV
CEO
40
⎯ ⎯
V
I
C
= 1mA
Emitter-Base Breakdown Voltage DCX122TH
DCX142TH
BV
EBO
5
⎯ ⎯
V
I
E
= 50μA
I
E
= 50μA
Collector Cutoff Current
I
CBO
⎯ ⎯
0.5
μA
V
CB
= 50V
Emitter Cutoff Current
DCX122TH
DCX142TH
I
EBO
⎯
⎯
⎯
0.5
0.5
μA
V
EB
= 4V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯ ⎯
0.3 V
I
C
= 5mA, I
B
= 0.25mA
DC Current Transfer Ratio
DCX122TH
DCX142TH
h
FE
100
100
250
250
600
600
⎯
I
C
= 1mA, V
CE
= 5V
Gain-Bandwidth Product*
f
T
⎯
200
⎯
MHz
V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only