User guide

DS30871 Rev. 6 - 2 2 of 7
www.diodes.com
DCX4710H
© Diodes Incorporated
Sub-Component Device – Pre-Biased PNP Transistor (Q1) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Supply Voltage
V
CC
-50 V
Input Voltage
V
IN
+6 to -40 V
Output Current (dc)
I
C(max)
-100 mA
Sub-Component Device – Pre-Biased NPN Transistor (Q2) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
50 V
Supply Voltage
V
CC
50 V
Input Voltage
V
IN
-10 to +40 V
Output Current (dc)
I
C(max)
100 mA
Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Cut Off Current
I
CBO
⎯ ⎯
-100 nA
V
CB
= -50V, I
E
= 0
Collector-Base Breakdown Voltage
V
(BR)CBO
-50
⎯
V
I
C
= -10μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-50
⎯
V
I
C
= -4mA, I
B
= 0 B
Input Off Voltage
V
I(OFF)
⎯ ⎯
-0.3 V
V
CE
= -5V, I
C
= -100μA
Output Off Current
I
O(OFF)
⎯ ⎯
-0.5
μA
V
CC
= -50V, V
I
= 0V
ON CHARACTERISTICS
DC Current Gain
h
FE
80
⎯ ⎯ ⎯
V
CE
= -5V, I
C
= -5mA
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯ ⎯
-0.25 V
I
C
= -10mA, I
B
= -0.3mA B
Output On Voltage
V
O(ON)
⎯
-0.1 -0.3 V
I
O
/I
I
= -10mA/-0.5mA
Input On Voltage (Load is present)
V
I(ON)
-1.4 -0.9
⎯
V
V
O
= -0.3V, I
C
= -2mA
Input Current
I
I
⎯ ⎯
-0.88 mA
V
I
= -5V
Input Resistor +/- 30% (Base)
ΔR1
7 10 13
KΩ
⎯
Pull-up Resistor (Base to Vcc supply) R2 32 47 62
KΩ
⎯
Resistor Ratio
Δ(R2/R1)
20
⎯
20 %
⎯
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (gain bandwidth product)
f
T
⎯
250
⎯
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02