Owner's manual

DDTC114ELP
Document number: DS30945 Rev. 7 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
DDTC114ELP
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage
V
CC
50 V
Input Voltage
V
IN
-10 to +40 V
Output Current
I
O
50 mA
Collector Current
I
C
(
MAX
)
100 mA
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
P
D
250 mW
Power Derating above 25°C
P
de
r
2 mW/°C
Thermal Resistance, Junction to Ambient Air (Note 4)
(Equivalent to one heated junction of NPN)
R
θ
JA
500 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Off Characteristics (Note 5)
Collector-Base Breakdown Voltage
BV
CBO
50
⎯ ⎯
V
I
C
= 10μA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
50
⎯ ⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
5
⎯ ⎯
V
I
E
= 50μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯ ⎯
0.5
μA
V
CE
= 50V, V
EB
(
OFF
)
= 3.0V
Base Cutoff Current (I
BE
X
) I
BL
⎯ ⎯
0.5
μA
V
CE
= 50V, V
EB
(
OFF
)
= 3.0V
Collector-Base Cut Off Current
I
CBO
⎯ ⎯
0.5
μA
V
CB
= 50V, I
E
= 0
Collector-Emitter Cut Off Current, I
O
(
OFF
)
I
CEO
⎯ ⎯
1
μA
V
CB
= 50V, I
B
= 0
Emitter-Base Cut Off Current
I
EBO
⎯ ⎯
0.4 mA
V
EB
= 4V, I
C
= 0
Input Off Voltage
V
I
(
off
)
⎯
1.16 0.5 V
V
CC
= 5V, I
O
= 100uA
On Characteristics (Notes 5 & 6)
DC Current Gain
h
FE
10
⎯ ⎯ ⎯ V
CE
= 5V, I
C
= 1mA
15
⎯ ⎯ ⎯ V
CE
= 5V, I
C
= 2mA
60
⎯ ⎯ ⎯ V
CE
= 5V, I
C
= 10mA
100
⎯ ⎯ ⎯ V
CE
= 5V, I
C
= 50mA
90
⎯ ⎯ ⎯ V
CE
= 5V, I
C
= 70mA
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯ ⎯
0.15 V
I
C
= 10mA, I
B
= 1mA
⎯ ⎯
0.2 V
I
C
= 50mA, I
B
= 5mA
⎯ ⎯
0.25 V
I
C
= 50mA, I
B
= 2.5mA
⎯ ⎯
0.25 V
I
C
= 50mA, I
B
= 10mA
⎯ ⎯
0.3 V
I
C
= 70mA, I
B
= 10mA
Base-Emitter Turn-On Voltage
V
BE(on)
⎯ ⎯
0.85 V
V
CE
= 5V, I
C
= 2mA
⎯ ⎯
0.95 V
V
CE
= 5V, I
C
= 10mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯ ⎯
0.98 V
I
C
= 10mA, I
B
= 1mA, V
CE
= 5V
⎯ ⎯
1.2 V
I
C
= 50mA, I
B
= 5mA, V
CE
= 5V
Input-On Voltage
V
I
(
on
)
2.5 1.6
⎯
V
V
O
= 0.3V, I
O
= 50mA
Input Current
I
I
⎯ ⎯
0.88 mA
V
I
= 5V
Output On Voltage (Same as V
CE
(
sat
)
) V
O
(
on
)
⎯ ⎯
0.3 V
I
I
= 2.5mA, I
O
= 50mA
Input Resistance R1 7 10 13
K
Ω
⎯
Resistance Ratio (R2/R1) 0.8 1 1.2
⎯ ⎯
Small Signal Characteristics
Current Gain-Bandwidth Product
f
T
⎯
250
⎯
MHz
V
CE
= 10V, I
E
= 5mA, f = 1MHz
Notes: 4. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”
5. Short duration pulse test used to minimize self-heating effect. Pulse Test: Pulse width tp<300 μs, Duty Cycle, d ≤ 2%.
6. Guaranteed by design.