User Manual

DS31224 Rev. 4 - 2 2 of 4
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DEMD48
© Diodes Incorporated
Electrical Characteristics, Pre-Biased NPN Transistor, Q
1
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Cut-Off Current I
CBO
- - 100 nA V
CB
= 50V, I
E
= 0A
Collector-Emitter Cut-Off Current I
CEO
- -
1
50
μA
V
CE
= 30V, I
B
= 0A B
V
CE
= 30V, I
B
= 0A, TB
A
= 150°C
Emitter-Base Cut-Off Current I
EBO
- - 90
μA
V
EB
= 5V, I
C
= 0A
V
I(off)
- 1.2 0.8 V
V
CE
= 5V, I
O
= 100μA
Input Voltage
V
I(on)
3 1.6 - V V
CE
= 0.3V, I
O
= 2mA
Collector-Emitter Saturation Voltage V
CE(SAT)
- - 0.15 V I
C
/I
B
= 10mA/0.5mA
NEW PRODUCT
B
DC Current Gain h
FE
80 - - - V
CE
= 5V, I
C
= 5mA
Input Resistance R
1
33 47 61 kΩ -
Resistance Ratio R
2
/R
1
0.8 1 1.2 - -
Collector Capacitance C
C
- - 2.5 pF V
CB
= 10V, I
E
= 0, f = 1MHz
Electrical Characteristics, Pre-Biased PNP Transistor, Q
2
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Cut-Off Current I
CBO
- - -100 nA V
CB
= -50V, I
E
= 0A
Collector-Emitter Cut-Off Current I
CEO
- -
-1
-50
μA
V
CE
= -30V, I
B
= 0A B
V
CE
= -30V, I
B
= 0A, TB
A
= 150°C
Emitter-Base Cut-Off Current I
EBO
- - -180
μA
V
EB
= -5V, I
C
= 0A
V
I(off)
- -0.6 -0.5 V
V
CC
= -5V, I
O
= -100μA
Input Voltage
V
I(on)
-1.1 -0.75 - V V
O
= -0.3V, I
O
= -5mA
Collector-Emitter Saturation Voltage V
CE(SAT)
- - -0.1 V I
C
/I
B
= -5mA/-0.25mA B
DC Current Gain h
FE
100 - - - V
CE
= -5V, I
C
= -10mA
Input Resistance R
1
1.54 2.2 2.86 kΩ -
Resistance Ratio R
2
/R
1
17 21 26 - -
Collector Capacitance C
C
- - 3.0 pF V
CB
= -10V, I
E
= 0, f = 1MHz
1
10
100
1,000