Owner manual

DESD3V3S1BLP3
Document number: DS36098 Rev. 3 - 2
2 of 4
www.diodes.com
December 2013
© Diodes Incorporated
DESD3V3S1BLP3
ADVANCE INFORMATION
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5)
P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
500
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
C
Electrical Characteristics (@T
A
= +25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage
V
RWM
—
— 3.3 V —
Channel Leakage Current (Note 6)
I
RM
—
10 100 nA
V
RWM
= 3.3V
Clamping Voltage, Positive Transients
V
CL
—
—
4.5
5.8
5.4
7.0
V
I
PP
= 1A, tp = 8/20μS
I
PP
= 5A, tp = 8/20μS
Breakdown Voltage
V
BR
3.8 — 6.5 V
I
R
= 1mA
Differential Resistance
R
DIF
—

0.3 — Ω
I
R
= 1A
Channel Input Capacitance
C
T
—
10 13 pF
V
R
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0125175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DISSI
P
ATI
O
N (mW)
D
25 10050 75 150
25
75
125
250
175
Note 5
200
225
0
50
25 50
75 100 125
150
P
EAK
P
U
LSE DE
R
A
T
I
N
G
%
O
F
PEAK POWER OR CURRENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200
0
t, TIME ( s)
Figure 3 Pulse Waveform

20 40
60
100
50
0
I , PEAK PULSE CURRENT (%I )
PppP
0.1
1
10
100
1000
0123
I , INSTANTANEOUS REVERSE CURRENT (nA)
R
Figure 4 Typical Reverse Characteristics
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A