User Manual

DESD5V0S1BL
Document number: DS31434 Rev. 4 - 2
2 of 4
www.diodes.com
March 2012
© Diodes Incorporated
DESD5
V
0S1BL
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation
P
PP
130 W
8/20μs, Per Fig. 1
Peak Pulse Current
I
PP
12 A
8/20μs, Per Fig. 1
ESD Protection – Contact Discharge
V
ESD_Contac
t
±30 kV IEC 61000-4-2 Standard
ESD Protection – Air Discharge
V
ESD_Ai
r
±30 kV IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5)
P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θ
JA
500
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage
V
RWM
- - 5 V -
Channel Leakage Current (Note 6)
I
RM
- 5 100 nA
V
RWM
= 5V
Clamping Voltage
V
CL
-
-
-
-
10
14
V
I
PP
= 1A, t
p
= 8/20μS
I
PP
= 12A, t
p
= 8/20μS
Breakdown Voltage
V
BR
5.5 - 9.5 V
I
R
= 1mA
Differential Resistance
R
DIF
-
0.4 -
Ω
I
R
= 10A, t
p
= 8/20μS
Channel Input Capacitance
C
T
- 35 45 pF
V
R
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
t, TIME ( s)
Fig. 1 Pulse Waveform
μ
20 40
60
100
50
0
I , PEAK PULSE CURRENT (%I )
PppP
20
25
30
35
01 23 4 56
V , REVERSE VOLTAGE (V)
Fig. 2 Typical Total Capacitance vs. Reverse Voltage
R
C
,
T
O
T
AL
C
A
P
A
C
I
T
AN
C
E (pF)
T
f = 1 MHz