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DMB54D0UV

Document number: DS31676 Rev. 5 - 2

1 of 7

www.diodes.com

March 2012

DMB54D0UV

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR

Features

• N-Channel MOSFET and PNP Transistor in One Package

• Low On-Resistance

• Very Low Gate Threshold Voltage, 1.0V max

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected MOSFET Gate up to 2kV

• Lead, Halogen and Antimony Free, RoHS Compliant (Note

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMB54D0UV-7 SOT563 3,000/Tape & Reel

DMB54D0UV-13 SOT563 10,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT563

Top View

Internal Schematic

Bottom View

MB2 = Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

M2B

ESD PROTECTED TO 2kV

Summary of content (7 pages)

PAGE 1
DMB54D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.
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DMB54D0UV Maximum Ratings – MOSFET, Q1 Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) Pulsed Drain Current (Note 4) @TA = 25°C unless otherwise specified Symbol VDSS VGSS ID IDM Continuous Value 50 ±12 160 560 Units V V mA mA Value -50 -45 -5.
PAGE 3
DMB54D0UV Electrical Characteristics - PNP Transistor @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage (Note 5) Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage (Note 5) DC Current Gain (Note 5) Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE Min -50 -45 -5 220 Typ — — — 290 — — Max — — — 475 -100 -400 Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — Base-Emitter Saturation Voltage (Note 5) VBE(SAT) Base-Emitter Voltage (Note 5) VBE(O
PAGE 4
DMB54D0UV 10 VGS = 2.5V VGS = 4.0V 1 0.001 0.01 0.1 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10 2.0 TA = 85°C TA = 25°C TA = -55°C 1 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 30 VGS = 4V ID = 100mA 1.6 1.
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DMB54D0UV PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 RθJA = 500°C/W 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 9 Derating Curve - Total Package Power Dissipation PNP Transistor 0.5 TA = 150°C VCE = 5V IC IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 T A = 25°C TA = -50°C 10 0.4 0.3 TA = 25°C 0.2 T A = 150°C 0.1 T A = -50°C 1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical DC Current Gain vs.
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DMB54D0UV Package Outline Dimensions A B SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMB54D0UV Document number: DS31676 Rev. 5 - 2 6 of 7 www.diodes.
PAGE 7
DMB54D0UV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.