User guide

POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 0
6 of 9
www.diodes.com
April 2014
© Diodes Incorporated
DMC1017UPD
-I , DRAIN SOURCE CURRENT (A)
Figure 13Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0 2 4 6 8 101214161820
V = -4.5V
GS
V = -2.5V
GS
-I , DRAIN SOURCE CURRENT (A)
Figure 14 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0.009
0.012
0.015
0.018
0.021
0.024
0.027
0.03
0 2 4 6 8 10 12 14 16 18 20
T = -55C
A
°
T = 25C
A
°
T = 85C
A
°
T = 125 C
A
°
T = 150C
A
°
V= -4.5V
GS
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 15 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0
0.5
1
1.5
2
-50 -25 0 25 50 75 100 125 150
V = -2.5V
I = -5A
GS
D
V = -4.5V
I = -10A
GS
D
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 16 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(on)
Ω
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
-50 -25 0 25 50 75 100 125 150
V= -2.5V
I= A
GS
D
-5
V=5V
I= A
GS
D
-4.
-10
T , AMBIENT TEMPERATURE (°C)
Figure 17 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
0
0.5
1
1.5
2
-50-25 0 25 50 75100125150
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 18 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2
T= 125C
A
°
1.5
T= 150C
A
°
T= 25C
A
°
T= 85C
A
°
T= -55C
A
°