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DMC2004DWK

Document number: DS31114 Rev. 4 - 2

1 of 8

www.diodes.com

September 2007

DMC2004DW

NEW PRODUCT

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Low On-Resistance

• Low Gate Threshold Voltage V

GS(th)

< 1V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 2)

• ESD Protected Gate

• "Green" Device (Note 3)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Terminal Connections: See Diagram

• Marking Information: See Page 7

• Ordering & Date Code Information: See Page 7

• Weight: 0.006 grams (approximate)

SOT-363

ESD protected

TOP VIEW

Internal Schematic

Maximum Ratings N-CHANNEL – Q

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain Source Voltage

DSS

20 V

Gate-Source Voltage

GSS

±8

Drain Current (Note 1)

= 25°C

= 85°C

540

390

Maximum Ratings P-CHANNEL – Q

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain Source Voltage

DSS

-20 V

Gate-Source Voltage

GSS

±8

Drain Current (Note 1)

= 25°C

= 85°C

-430

-310

Thermal Characteristics – Total Device @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 1)

250 mW

Thermal Resistance, Junction to Ambient

500

°C/W

Operating and Storage Temperature Range

, T

STG

-65 to +150

°C

Notes: 1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

Summary of content (8 pages)

PAGE 1
DMC2004DWK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage VGS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 3) • • • • • • • Case: SOT-363 Case Material: Molded Plastic.
PAGE 2
DMC2004DWK Electrical Characteristics N-CHANNEL – Q1 NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Electrical Characteristics P-CHANNEL – Q2 Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain
PAGE 3
DMC2004DWK ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0 0 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Q1, N-CHANNEL ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature 10 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs.
PAGE 4
DMC2004DWK NEW PRODUCT Q1, N-CHANNEL, continued TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current DMC2004DWK Document number: DS31114 Rev. 4 - 2 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance 4 of 8 www.diodes.
PAGE 5
DMC2004DWK -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 0 0 -VGS, GATE SOURCE VOLTAGE (V) Fig. 12 Typical Transfer Characteristics -VDS, DRAIN SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Q2, P-CHANNEL -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current TA, AMBIENT TEMPERATURE (°C) Fig. 13 Gate Threshold Voltage vs. Ambient Temperature 10 -ID, DRAIN-SOURCE CURRENT (A) Fig.
PAGE 6
DMC2004DWK NEW PRODUCT Q2, P-CHANNEL, Continued TA, AMBIENT TEMPERATURE (°C) Fig. 17 Static Drain-Source On-State Resistance vs. Ambient Temperature -ID, DRAIN CURRENT (A) Fig. 19 Forward Transfer Admittance vs. Drain Current DMC2004DWK Document number: DS31114 Rev. 4 - 2 6 of 8 www.diodes.com -VDS, SOURCE-DRAIN VOLTAGE (V) Fig. 18 Reverse Drain Current vs. Source-Drain Voltage -VDS, DRAIN-SOURCE VOLTAGE (V) Fig.
PAGE 7
DMC2004DWK Ordering Information (Note 5) Part Number DMC2004DWK-7 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
PAGE 8
NEW PRODUCT DMC2004DWK IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others.