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DMC2004LPK

Document number: DS30854 Rev. 7 - 2

1 of 8

www.diodes.com

February 2013

DMC2004LPK

NEW PRODUCT

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Low On-Resistance

• Low Gate Threshold Voltage V

GS(th)

< 1V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

• ESD Protected Gate

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1612-6

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 6

• Ordering Information: See Page 6

• Weight: 0.003 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMC2004LPK-7 X1-DFN1612-6 3000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

X1-DFN1612-6

TOP VIEW

Internal Schematic

ESD protected

12 3

456

C1 = Marking Code

YM = Date Code Marking

Y = Year (ex: Z = 2012)

M = Month (ex: 9 = September)



Green

Summary of content (8 pages)

PAGE 1
DMC2004LPK Green COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage VGS(th) < 1V • • Low Input Capacitance • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020C • Low Input/Output Leakage • Terminal Connections: See Diagram • Complementary Pair MOSFET • • Ultra-Small Surface Mount Package Terminals: Finish – NiPdAu over Copper leadframe.
PAGE 2
DMC2004LPK Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage TA = +25°C TA = +85°C NEW PRODUCT Drain Current (Note 5) Maximum Ratings P-CHANNEL – Q2 Symbol VDSS VGSS TA = +25°C TA = +85°C ID Unit V V Value 500 250 -65 to +150 Unit mW °C/W °C mA (@TA = +25°C, unless otherwise specified.
PAGE 3
DMC2004LPK ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0 0 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Q1, N-CHANNEL TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs.
PAGE 4
DMC2004LPK NEW PRODUCT Q1, N-CHANNEL, (cont.) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current DMC2004LPK Document number: DS30854 Rev. 7 - 2 4 of 8 www.diodes.com VDS, DRAIN-SOURCE VOLTAGE (V) Fig.
PAGE 5
DMC2004LPK -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 0 0 -VGS, GATE SOURCE VOLTAGE (V) Fig. 12 Typical Transfer Characteristics -VDS, DRAIN SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Q2, P-CHANNEL TA, AMBIENT TEMPERATURE (°C) Fig. 13 Gate Threshold Voltage vs. Ambient Temperature -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current 10 -ID, DRAIN-SOURCE CURRENT (A) Fig.
PAGE 6
DMC2004LPK NEW PRODUCT Q2, P-CHANNEL, (cont.) TA, AMBIENT TEMPERATURE (°C) Fig. 17 Static Drain-Source On-State Resistance vs. Ambient Temperature -ID, DRAIN CURRENT (A) Fig. 19 Forward Transfer Admittance vs. Drain Current DMC2004LPK Document number: DS30854 Rev. 7 - 2 6 of 8 www.diodes.com -VDS, DRAIN-SOURCE VOLTAGE (V) Fig.
PAGE 7
DMC2004LPK Package Outline Dimensions A X1-DFN1612-6 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 ⎯ ⎯ b 0.15 0.25 0.20 D 1.55 1.675 1.60 d 0.25 ⎯ ⎯ D2 0.40 0.60 0.50 E 1.15 1.28 1.20 e 0.40 ⎯ ⎯ E2 0.45 0.65 0.55 f 0.15 ⎯ ⎯ L 0.20 0.30 0.25 Z 0.10 ⎯ ⎯ All Dimensions in mm A1 NEW PRODUCT A3 Z R0 .1 D2 B 50 E2 E d L e d f z D Suggested Pad Layout G2 X2 Dimensions Value (in mm) G1 0.15 G2 0.175 G3 0.15 X1 0.60 X2 0.25 Y1 0.65 Y2 0.45 a 0.10 b 0.
PAGE 8
DMC2004LPK IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).