User guide

DMC2038LVT
Document number: DS35417 Rev. 6 - 2
3 of 10
www.diodes.com
September 2013
© Diodes Incorporated
DMC2038LVT
NEW PRODUCT
Electrical Characteristics N-CHANNEL – Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
— V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current @T
c
= +25°C I
DSS
— —
1.0 A
V
DS
=16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7 )
Gate Threshold Voltage
V
GS(th)
0.4 — 1.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
27 35
m
V
GS
= 4.5V, I
D
= 4.0A
33 43
V
GS
= 2.5V, I
D
= 2.5A
43 56
V
GS
= 1.8V, I
D
= 1.5A
Forward Transfer Admittance
|Y
fs
|
9 — S
V
DS
= 5V, I
D
= 3.4A
Diode Forward Voltage
V
SD
0.4 — 1.1 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
400 530 pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
70 90 pF
Reverse Transfer Capacitance
C
rss
65 100 pF
Gate Resistance
R
g
1.9
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
5.7
nC
V
DS
= 15V,I
D
= 5.8A
Total Gate Charge (V
GS
= 10V) Q
g
12 17 nC
Gate-Source Charge
Q
gs
0.7
nC
Gate-Drain Charge
Q
gd
1.4
nC
Turn-On Delay Time
t
D(on)
5 10 ns
V
DS
= 10V, V
GS
= 4.5V,
R
G
= 6, I
DS
= 1A,
Turn-On Rise Time
t
r
8 16 ns
Turn-Off Delay Time
t
D(off)
25 40 ns
Turn-Off Fall Time
t
f
8 16 ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
V , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
5
10
15
20
25
30
0 0.5 1 1.5 2
V=10V
GS
V =4.5V
GS
V =4.0V
GS
V =3.5V
GS
V =3.0V
GS
V =2.5V
GS
V =2.0V
GS
V =1.5V
GS
V , GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
T = 150C
A
T = 125C
A
T = 85C
A
T = 25C
A
T = -55C
A
V = 5.0V
DS