User guide
DMC2038LVT
Document number: DS35417 Rev. 6 - 2
6 of 10
www.diodes.com
September 2013
© Diodes Incorporated
DMC2038LVT
NEW PRODUCT
Electrical Characteristics P-CHANNEL – Q2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20
—
— V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current @T
c
= +25°C I
DSS
— —
-1.0 A
V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 — -1.0 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
—
57 74
m
V
GS
= -4.5V, I
D
= -3.0A
—
76 110
V
GS
= -2.5V, I
D
= -1.5A
—
102 168
V
GS
= -1.8V, I
D
= -1.0A
Forward Transfer Admittance
|Y
fs
|
—
10 — S
V
DS
= -5V, I
D
= -3.0A
Diode Forward Voltage
V
SD
—
-0.8 -1.0 V
V
GS
= 0V, I
S
= -0.6A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 530 705 pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
70 95 pF
Reverse Transfer Capacitance
C
rss
—
60 90 pF
Gate Resistance
R
g
—
72 -
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
—
7 10 nC
V
DS
= -15V,I
D
= -6A
Total Gate Charge (V
GS
= -10V) Q
g
—
14
—
nC
Gate-Source Charge
Q
gs
—
0.95
—
nC
Gate-Drain Charge
Q
gd
—
1.2
—
nC
Turn-On Delay Time
t
D(on)
—
11 20 nS
V
DS
= -10V, V
GS
= -4.5V,
R
G
= 6, I
S
= -1A,
Turn-On Rise Time
t
r
—
12 22 nS
Turn-Off Delay Time
t
D(off)
—
21 34 nS
Turn-Off Fall Time
t
f
—
13 23 nS
Notes: 7. Short duration pulse test used to minimize self-heating effec
8. Guaranteed by design. Not subject to product testing.
-V , DRAIN -SOURCE VOLTAGE(V)
Fig. 13 Typical Output Characteristics
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0 0.5 1 1.5 2
0
5
10
15
20
-V =10V
GS
-V =4.5V
GS
-V =4.0V
GS
-V =3.5V
GS
-V =3.0V
GS
-V =2.5V
GS
-V =2.0V
GS
-V =1.5V
GS
-V , GATE SOURCE VOLTAGE(V)
Fig. 14 Typical Transfer Characteristics
GS
I- , D
R
AIN
C
U
R
R
EN
T
(A)
D
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5