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DMC2400UV

Document number: DS35537 Rev. 6 - 2

1 of 10

www.diodes.com

February 2012

DMC2400UV

NEW PRODUCT

ADVANCE INFORMATION

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Device

(BR)DSS

DS(ON)

max

= 25°C

Q1 20V

0.5 @ V

= 4.5V

1030mA

0.9 @ V

= 1.8V

740mA

Q2 -20V

1.0 @ V

= -4.5V

-700mA

2.0 @ V

= -1.8V

-460mA

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage V

GS(th)

<1V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

• ESD Protected Gate to 2kV HBM

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device, Halogan and Antimony Free (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This new generation MOSFET has been designed to minimize the

on-state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Load switch

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.003 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMC2400UV-7 SOT563 3000/Tape & Reel

DMC2400UV-13 SOT563 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ESD PROTECTED TO 2kV

Top View Bottom View Equivalent Circuit

CA3 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

SOT563

Summary of content (10 pages)

PAGE 1
DMC2400UV COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary Device V(BR)DSS Q1 20V Q2 Features and Benefits RDS(ON) max ID max TA = 25°C 0.5Ω @ VGS = 4.5V 1030mA 0.9Ω @ VGS = 1.8V 740mA 1.0Ω @ VGS = -4.5V -700mA 2.0Ω @ VGS = -1.
PAGE 2
DMC2400UV ADVANCE INFORMATION NEW PRODUCT Maximum Ratings - Q1 N-CHANNEL @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State t<10s Continuous Drain Current (Note 5) VGS = 1.
PAGE 3
DMC2400UV Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS 20 - - 100 ±1 ±4.0 V nA |Yfs| VSD 0.5 - 0.3 0.35 0.45 0.55 0.65 2 1.4 0.7 0.9 0.48 0.5 0.7 0.9 1.5 1.2 Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 37.1 6.5 4.8 68 0.5 0.07 0.1 4.06 7.28 13.74 10.
PAGE 4
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.0 1.6 VGS = 1.5V 1.2 0.8 VGS = 1.8V VGS = 2.5V 0.4 VGS = 5.0V 0 0 VGS = 4.5V 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 VGS = 4.5V ID = 1.0A 1.4 VGS = 2.5.V ID = 500mA 1.2 1.0 0.8 0.6 -50 0.8 VGS = 4.5V 0.6 TA = 150°C T A = 125°C 0.4 TA = 85°C TA = 25°C 0.
PAGE 5
DMC2400UV C, CAPACITANCE (pF) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) f = 1MHz 50 40 Ciss 30 20 10 Coss C rss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 1,000 TA = 150°C 100 T A = 125°C 10 T A = 85°C TA = 25°C 1 TA = -55°C 0.1 2 20 5 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs.
PAGE 6
DMC2400UV Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS -20 - - -100 ±1.0 ±5.0 V nA -0.5 - |Yfs| VSD - 0.67 0.7 0.9 1.2 1.5 5 0.7 -0.75 -1.0 0.97 1.0 1.5 2.0 3.0 -1.2 Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 46.1 7.2 4.9 14.3 0.5 0.85 0.09 0.09 8.5 4.3 20.2 19.
PAGE 7
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 2.0 1.8 1.6 1.4 VGS = -1.8V 1.2 1.0 VGS = -2.5V 0.8 0.6 VGS = -4.5V 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 -ID, DRAIN SOURCE CURRENT Fig. 15 Typical On-Resistance vs. Drain Current and Gate Voltage 0.01 0.1 1 -ID, DRAIN SOURCE CURRENT (A) Fig. 16 Typical On-Resistance vs. Drain Current and Temperature 10 2.0 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig.
PAGE 8
DMC2400UV 80 1,000 -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) TA = 150° C 60 Ciss 40 20 Coss 100 0 TA = 125°C 10 TA = 85°C TA = 25°C 1 Crss 0 0.1 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Junction Capacitance 4 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 22 Typical Drain-Source Leakage Current vs.
PAGE 9
DMC2400UV ADVANCE INFORMATION NEW PRODUCT Package Outline Dimensions A B SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMC2400UV Document number: DS35537 Rev. 6 - 2 9 of 10 www.diodes.
PAGE 10
DMC2400UV ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).