Owner's manual

DMC3018LSD
Document number: DS31310 Rev. 9 - 2
3 of 8
www.diodes.com
February 2014
© Diodes Incorporated
DMC3018LSD
NEW PRODUCT
Electrical Characteristics P-CHANNEL – Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30
⎯ ⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1.0 µA
V
DS
= -24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
± 100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1 -1.7 -2.1 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
35 45
mΩ
V
GS
= -10V, I
D
= -6A
⎯
56 65
V
GS
= -4.5V, I
D
= -5.0A
Forward Transfer Admittance
|Y
fs
| ⎯
8.2
⎯
S
V
DS
=-5V, I
D
= -6A
Diode Forward Voltage (Note 7)
V
SD
-0.5
⎯
-1.2 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
722
⎯
pF
V
DS
= -15V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
⎯
114
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
92
⎯
pF
Gate Resistance
R
G
⎯
1.9
⎯ Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
g
⎯
7.0
13.7
⎯
nC
V
DS
= -15V, V
GS
= -4.5V, I
D
= -6A
V
DS
= -15V, V
GS
= -10V, I
D
= -6A
Gate-Source Charge
Q
gs
⎯
1.7
⎯
V
DS
= -15V, V
GS
= -4.5V, I
D
= -6A
Gate-Drain Charge
Q
gd
⎯
4.1
⎯ V
DS
= -15V, V
GS
= -4.5V, I
D
= -6A